| 1. |
- Ahmed, S., et al.
(författare)
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Annealing characteristics of electrically isolated InGaAsP devices
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:6, s. 062112-
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Tidskriftsartikel (refereegranskat)abstract
- The authors report on the effects of fluorine implants on the sheet resistivity of n-type InGaAsP layers grown lattice matched to InP by metal organic molecular beam epitaxy. Projected range matched fluorine ions are implanted at multiple energies and single MeV energy at room temperature (RT) and 77 K in both cases. Hall and resistivity measurements are carried out for the van der Pauw samples and the evolution of sheet resistivity (R-s) as a function of annealing temperature was studied in both cases. Fluorine multienergy implantation at 77 K produces higher as-implanted resistivity layers of similar to 10(7) Omega/square compared to RT implants. It is further observed that RT and 77 K implants recover to their preimplanted sheet resistivity values as soon as they are annealed at temperatures higher than 500 degrees C. Substrate temperature and collision cascade density due to multiple energy implants are found to play an important role to optimize the isolation process.
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| 2. |
- Nawaz, M., et al.
(författare)
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Assessment of High and Low Temperature Performance of SiC BJTs
- 2009
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2008. - STAFA-ZURICH : TRANS TECH PUBLICATIONS LTD. ; , s. 825-828
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Konferensbidrag (refereegranskat)abstract
- This paper addresses the performance of SiC NPN Bipolar Junction Transistors (BJTs) at high and low temperature. A current gain of 50 at room temperature was obtained which decreases to 25 at 275 degrees C. A maximum current gain (beta) of 111 has been reported at -86 degrees C. At low temperature (below -86 degrees C), the current gain drops rapidly because of carrier freezout effect. At room temperature, a minimum on-resistance of 7 m Omega-cm(2) was obtained. This increases to 28 m Omega-cm(2) at 275 degrees C. The on-resistance of BJTs is approximately unaffected by lowering the temperature down to -86 degrees C front room temperature. Below -86 degrees C, the on-reststance JUMPS up rapidly because of carrier freezeout. Electrical performance of BJTs have been fairly stable during stress measurement at high temperature (120 hours at 100 degrees C) at a collector bias of 1000V (with open base) for devices with a breakdown voltage of 1200VA. The devices have been stressed further at low (i.e., 6) and high gain (i.e., 15) at room temperature. Initial degradation within first hour of stress test has been reported and then degradation stabilizes out. Packaged devices were tested Lip to 550 degrees C and performed admirably well up to that temperature.
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| 3. |
- Nawaz, M., et al.
(författare)
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Radiation hardness assessment of high voltage 4H-SiC BJTs
- 2009
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Ingår i: Device Research Conference, 2009. DRC 2009. - 9781424435289 ; , s. 279-280
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Konferensbidrag (refereegranskat)abstract
- Silicon carbide (SiC) based bipolar junction transistors (BJTs) are in teresting can didates fo r high temperature and for high power applications primarily due to their low conduction losses and fast switching capability. While excellent room temperature characteristics in terms of high breakdown voltage, low on-resistance and high gain [1, 2] have bee n reported, very limited datais available for their assessment in extreme harsh environment (e.g., high temperature and/or radiation) where the conventional Si devices T4, 5] do not offer acceptable functionality. SiC based BJTs [3] have been irradiated with protons and 13C ions and show fairly stable electrical behavior with proton fluence up to 5 × 1010 p/cm-2 and 13C ions fluence up to 5 × 10 10 cm-2. Early results on neutron irradiated 6H-S1C JFETs [6] showed no significant change at fluences up to 1 × 1015 n/cm2, but degradation was increased significantly with additional fluence due to the introduction of dee p-level traps. Similarly, recent studies on SiC JF ETs and Schottly diodes with gamma rays (60Co) and protons reported no degradation from gamma rays up to a dose of ∼ 6 Mrad but high energy protons (63 MeV) at the fluence of 5 × 1015 p/cm 2 induced an 80 % reduction in saturated drain current [7] This work demonstrates for the first time the suitability of SiC-B JTs when irradiated with gamma rays.
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