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- Larsson, Mats, 1976-, et al.
(författare)
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Luminescence study of Si/Ge quantum dots
- 2003
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Ingår i: Physica. E, Low-Dimensional systems and nanostructures. - 1386-9477 .- 1873-1759. ; 16:3-4, s. 476-480
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Tidskriftsartikel (refereegranskat)abstract
- We present a photoluminescence (PL) study of Ge quantum dots embedded in Si. Two different types of recombination processes related to the Ge quantum dots are observed in temperature-dependent PL measurements. The Ge dot-related luminescence peak near 0.80 eV is ascribed to the spatially indirect recombination in the type-II band lineup, while a high-energy peak near 0.85 eV has its origin in the spatially direct recombination. A transition from the spatially indirect to the spatially direct recombination is observed as the temperature is increased. The PL dependence of the excitation power shows an upshift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is ascribed to band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples.
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- Larsson, Mats, 1976-, et al.
(författare)
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Photoluminescence study of Si/Ge quantum dots
- 2003
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 532-535, s. 832-836
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Tidskriftsartikel (refereegranskat)abstract
- Ge quantum dots embedded in Si are studied by means of photoluminescence (PL). The temperature dependent PL measurements show two different types of recombination processes related to the quantum dots. We ascribe a peak near 0.80 eV to the spatially indirect recombination in the type-II band lineup where the electron is located in the surrounding Si close to the interface and the hole in the Ge dot. Furthermore, a peak near 0.85 eV is attributed to the spatially direct recombination. We observe a transition from the spatially indirect to the spatially direct recombination as the temperature is increased. The measurements also show an up-shift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is primarily ascribed to an enhanced confinement of the electron associated with the increased band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results, derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples. ⌐ 2003 Elsevier Science B.V. All rights reserved.
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