Highly selective etch process for silicon-on-insulator nano-devices

• Reactive ion etch (RIE) processes with HBr/O-2 chemistry are optimized for processing of functional nanostructures based on silicon and polysilicon. The etch rate, etch selectivity, anisotropy and sidewall roughness are investigated for specific applications. The potential of this process technology for nanoscale functional devices is demonstrated by MOSFETs with 12 nm gate length and optimized photonic devices with ultrahigh Q-factors.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Nyckelord

HBr

ICP-RIE

SOI

EJ-MOSFET

microring resonator

silicon photonics

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)