| 1. |
|
|
| 2. |
- Wang, Xiangjun, et al.
(författare)
-
Growth and characterization of Na0.5K0.5NbO3 thin films on polycrystalline Pt80Ir20 substrates
- 2002
-
Ingår i: Journal of Materials Research. - 0884-2914 .- 2044-5326. ; 17:5, s. 1183-1191
-
Tidskriftsartikel (refereegranskat)abstract
- Na0.5K0.5NbO3 thin films have been deposited onto textured polycrystalline Pt80Ir20 substrates using radio frequency magnetron sputtering. Films were grown in off- and on-axis positions relative to the target at growth temperatures of 500-700 degreesC and sputtering pressures of 1-7 Pa. The deposited films were found to be textured, displaying a mixture of two orientations (001) and (101). Films grown on-axis showed a prefered (001) orientation, while the off-axis films had a (101) orientation. Scanning electron microscopy showed that the morphology of the films was dependent on the substrate position and sputtering pressure. The low-frequency (10 kHz) dielectric constants of the films were found to be in the range of approximately 490-590. Hydrostatic piezoelectric measurements showed that the films were piezoelectric in the as-deposited form with a constant up to 14.5 pC/N.
|
|
| 3. |
|
|
| 4. |
- Broitman, E., et al.
(författare)
-
Electrical and optical properties of CNx(0=x=0.25) films deposited by reactive magnetron sputtering
- 2001
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 89:2, s. 1184-1190
-
Tidskriftsartikel (refereegranskat)abstract
- The electrical and optical properties of carbon-nitride CNx films (O=x=0.25) deposited by unbalanced reactive magnetron sputtering from a graphite target in mixed Ar/N2 discharges at a substrate temperature of 350°C have been investigated. Pure C films exhibit a dark conductivity at room temperature of 250 O-1 cm-1, which grows up to 250 O-1 cm-1 for CNx films with N content of 20%. For CNx films, temperature-dependent conductivity measurements suggest that two electron conduction processes exist in the investigated temperature range 130
|
|
| 5. |
- Svavarsson, HG, et al.
(författare)
-
Electrostatic powder impact deposition (EPID) of Ge on Si and Cu substrates, microstructure and morphology study
- 2000
-
Ingår i: Journal of Physics D. - 0022-3727 .- 1361-6463. ; 33:10, s. 1155-1160
-
Tidskriftsartikel (refereegranskat)abstract
- Electrostatic powder impact deposition (EPID) is a novel method to deposit thin films by electrostatic acceleration of powder material between charged plates in vacuum. The EPID method has been used to deposit Ce films on Si and Cu substrates at room temperature. Surface morphology and microstructure as studied by SEM showed a very rough surface. XRD and RES measurements revealed that the films were mostly nanocrystalline or amorphous ae oxide. The grain size distribution of the Ge powder was measured before and after deposition. Initial distribution showed a median grain size of 32 mu m and distribution width of 80 mu m. After the deposition the median grain size had decreased to 16 mu m acid the width decreased to 55 mu m. The grain size of the deposited film was less than 1 mu m.
|
|
| 6. |
- Wang, Xin, et al.
(författare)
-
Growth of SrTiO3 thin films on LaAlO3(001) substrates, the influence of growth temperature on composition, orientation, and surface morphology
- 2000
-
Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 360:1-2, s. 181-186
-
Tidskriftsartikel (refereegranskat)abstract
- SrTiO3 films have been grown on LaAlO3(001) single crystal substrates using rf-sputtering. The substrates were held at temperatures ranging from 100 to 850°C. For growth temperatures as low as 350°C epitaxial growth is observed. Below 350°C the films are polycrystalline and three different orientations (100), (110), and (111) can be observed using X-ray diffraction. Atomic force microscopy shows that films deposited at temperatures below 350°C and above 650°C are smooth while the surfaces of the films made at intermediate temperatures are rough and faceted. As growth temperatures decrease below 250°C, the films show decreasing amount of Sr.
|
|
