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Träfflista för sökning "WFRF:(Olafsson S.) srt2:(2005-2009)"

Sökning: WFRF:(Olafsson S.) > (2005-2009)

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  • Agustsson, J. S., et al. (författare)
  • Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO(2)
  • 2008
  • Ingår i: Journal of Physics Conference Series. - : IOP Science. - 1742-6596.
  • Konferensbidrag (refereegranskat)abstract
    • Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 degrees C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250 degrees C. The electrical resistivity increases with increased growth temperature, as well as the morphological grain size, and the surface roughness, measured with a scanning tunneling microscope (STM).
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3.
  • Agustsson, J. S., et al. (författare)
  • Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
  • 2008
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 254:22, s. 7356-7360
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 degrees C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 degrees C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.
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  • Arnalds, U. B., et al. (författare)
  • A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements
  • 2007
  • Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 78:10, s. 103901-
  • Tidskriftsartikel (refereegranskat)abstract
    • We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.
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  • Gylfason, Kristinn B., 1978-, et al. (författare)
  • In-situ resistivity measurements during growth of ultra-thin Cr_0.7Mo_0.3
  • 2006
  • Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 515:2, s. 583-586
  • Tidskriftsartikel (refereegranskat)abstract
    • The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs- Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.
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  • Messias, M. J, et al. (författare)
  • The Greenland Sea tracer experiment 1996–2002: Horizontal mixing and transport of Greenland Sea Intermediate Water
  • 2008
  • Ingår i: Progress In Oceanography. - : Elsevier BV. - 0079-6611. ; 78:1, s. 85-105
  • Tidskriftsartikel (refereegranskat)abstract
    • In summer 1996, a tracer release experiment using sulphur hexafluoride (SF6) was launched in the intermediate-depth waters of the central Greenland Sea (GS), to study the mixing and ventilation processes in the region and its role in the northern limb of the Atlantic overturning circulation. Here we describe the hydrographic context of the experiment, the methods adopted and the results from the monitoring of the horizontal tracer spread for the 1996–2002 period documented by 10 shipboard surveys. The tracer marked “Greenland Sea Arctic Intermediate Water” (GSAIW). This was redistributed in the gyre by variable winter convection penetrating only to mid-depths, reaching at most 1800 m depth during the strongest event observed in 2002. For the first 18 months, the tracer remained mainly in the Greenland Sea. Vigorous horizontal mixing within the Greenland Sea gyre and a tight circulation of the gyre interacting slowly with the other basins under strong topographic influences were identified. We use the tracer distributions to derive the horizontal shear at the scale of the Greenland Sea gyre, and rates of horizontal mixing at 10 and 300 km scales. Mixing rates at small scale are high, several times those observed at comparable depths at lower latitudes. Horizontal stirring at the sub-gyre scale is mediated by numerous and vigorous eddies. Evidence obtained during the tracer release suggests that these play an important role in mixing water masses to form the intermediate waters of the central Greenland Sea. By year two, the tracer had entered the surrounding current systems at intermediate depths and small concentrations were in proximity to the overflows into the North Atlantic. After 3 years, the tracer had spread over the Nordic Seas basins. Finally by year six, an intensive large survey provided an overall synoptic documentation of the spreading of the tagged GSAIW in the Nordic Seas. A circulation scheme of the tagged water originating from the centre of the GS is deduced from the horizontal spread of the tracer. We present this circulation and evaluate the transport budgets of the tracer between the GS and the surroundings basins. The overall residence time for the tagged GSAIW in the Greenland Sea was about 2.5 years. We infer an export of intermediate water of GSAIW from the GS of 1 to 1.85 Sv (1 Sv = 106 m3 s−1) for the period from September 1998 to June 2002 based on the evolution of the amount of tracer leaving the GS gyre. There is strong exchange between the Greenland Sea and Arctic Ocean via Fram Strait, but the contribution of the Greenland Sea to the Denmark Strait and Iceland Scotland overflows is modest, probably not exceeding 6% during the period under study.
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10.
  • Agnarsson, Björn, et al. (författare)
  • Influence of initial surface reconstruction on nitridation of Al2O3 (0001) using low pressure ammonia
  • 2007
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101:1, s. 013519-
  • Tidskriftsartikel (refereegranskat)abstract
    • The purpose of this study is to investigate the effect of initial surface reconstruction on the nitridation process of Al2O3 (0001). This was done by exposing differently reconstructed sapphire substrates at different temperatures to low pressure ammonia (NH3). Structural and chemical analysis were carried out using low-electron energy diffraction and x-ray photoelectron spectroscopy. The experiments revealed that using low pressure ammonia (P-NH3 < 1 X 10(-5) Torr), no nitridation takes place on (1x1) unreconstructed surfaces. However, when the unreconstructed surface starts to change to a (root 31 x root 31) R +/- 9 degrees reconstructed surface, with increasing substrate temperature, the nitridation becomes successful. When using the initially reconstructed surface, the nitridation is successful even from the lowest temperature used. These results suggest that the initial surface reconstruction has a major effect on the nitridation process. This kinetic behavior has not been reported before, with most nitridation studies mainly focusing on the effect of surface temperature on the resulting surface morphology, rather than the actual kinetics of the process itself.
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11.
  • Agnarsson, Björn, et al. (författare)
  • Investigation on the role of indium in the removal of metallic gallium from soft and hard sputtered GaN (0001) surfaces
  • 2009
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:21, s. 6023-6026
  • Tidskriftsartikel (refereegranskat)abstract
    • Cleaning of GaN by argon sputtering and subsequent annealing introduces metallic gallium on the GaN surface. Once formed, this metallic gallium can be difficult to remove. it has a strong influence on the Fermi level position in the band gap and poses a problem for subsequent epitaxial growth on the surface. We present a method of removing metallic gallium from moderately damaged GaN surfaces by deposition of indium, and formation of an In-Ga alloy that can be desorbed by annealing at similar to 550 degrees C. After the In-Ga alloy has desorbed, photoemission spectra show that the Ga3d bulk component becomes narrower indicating a smoother and more homogeneous surface. This is also reflected in a sharper low energy electron diffraction pattern. On heavily damaged GaN surfaces, caused by hard sputtering, larger amount of metallic gallium forms after annealing at 600 degrees C. This gallium readily alloys with deposited indium, but the alloy does not desorb until a temperature of 840 degrees C is reached and even then, traces of both indium and metallic gallium could be found on the surface.
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  • Olsen, Are, 1972, et al. (författare)
  • Overview of the Nordic Seas CARINA data and salinity measurements
  • 2009
  • Ingår i: Earth System Science Data Discussions. - 1866-3591. ; 2, s. 1-25
  • Tidskriftsartikel (refereegranskat)abstract
    • Water column data of carbon and carbon relevant hydrographic and hydrochemical parameters from 188 previously non-publicly available cruises in the Arctic, Atlantic, and Southern Ocean have been retrieved and merged into a new database: CARINA (CARbon IN the Atlantic). The data have been subject to rigorous quality control (QC) in order to ensure highest possible quality and consistency. The data for most of the parameters included were examined in order to quantify systematic biases in the reported values, i.e. secondary quality control. Significant biases have been corrected for in the data products, i.e. the three merged files with measured, calculated and interpolated values for each of the three CARINA regions; the Arctic Mediterranean Seas (AMS), the Atlantic (ATL) and the Southern Ocean (SO). With the adjustments the CARINA database is consistent both internally as well as with GLODAP (Key et al., 2004) and is suitable for accurate assessments of, for example, oceanic carbon inventories and uptake rates and for model validation. The Arctic Mediterranean Seas includes the Arctic Ocean and the Nordic Seas, and the quality control was carried out separately in these two areas. This contribution provides an overview of the CARINA data from the Nordic Seas and summarises the findings of the QC of the salinity data. One cruise had salinity data that were of questionable quality, and these have been removed from the data product. An evaluation of the consistency of the quality controlled salinity data suggests that they are consistent to at least 0.05.
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15.
  • Qi, BingCui, et al. (författare)
  • Characterisation of high-temperature annealing effects on alpha-Al2O3(0001) substrates
  • 2008
  • Ingår i: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY. - : IOP Publishing.
  • Konferensbidrag (refereegranskat)abstract
    • High temperature annealing in air has been applied as an effective ex-situ surface treatment for the alpha-Al2O3(0001) substrates used in molecular beam epitaxy (MBE) growth of III-nitrides. The method is based on the criterion that atomically smooth surface of terrace-and-step like structure, which is considered to be crucial in obtaining a high quality epilayer, could be produced upon high temperature annealing. The annealed surface was mostly studied by atomic force microscopy (AFM) imaging. In this work, the effects of high temperature annealing on the surface morphology, crystalline quality, optical quality and surface reconstruction behaviour of alpha-Al2O3(0001) substrates were fully studied using AFM, triple-axis high resolution X-ray diffraction (THRXRD), spectroscopic ellipsometry (SE) and insitu reflection high-energy electron diffraction (RHEED). A new strategy, H-2 thermal cleaning at 1100 degrees C followed by O-2 annealing at 1300 degrees C was proposed as an efficient surface treatment for alpha-Al2O3 (0001) substrates for MBE growth.
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