Growth of Copper(I) Nitride by ALD Using Copper(II) Hexafluoroacetylacetonate, Water and Ammonia as Precursors

• Films of copper(I) nitride were deposited by atomic layer deposition (ALD) using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors. Introduction of a water pulse in the ALD cycle was found to be crucial for initiating film growth on both amorphous SiO2 and single-crystalline α-Al2O3(001) substrates. The water pulses generated an oxidic copper monolayer, which in a subsequent ammonia pulse was converted to the nitride. The films have been grown in the temperature range from 210to302°C . Phase pure films of Cu3N were obtained up to 265°C . At higher deposition temperatures such as 283°C , phase mixtures of Cu3N and Cu were obtained. For temperatures above 302°C films of only Cu were grown. Film growth rate was the same on the two different substrates. The films were randomly oriented on SiO2 . Completely intact films were obtained at a thickness of 20nm . The optical bandgap of the films was measured to be 1.6eV .

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NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)

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