| 1. |
- Fallqvist, Mikael, et al.
(author)
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Nucleation And Growth Of Cvd α-Al2O3 On TiXOY Template
- 2012
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In: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 207, s. 254-261
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Journal article (peer-reviewed)abstract
- The microstructure, phase and chemical composition of TixOy templates used to nucleate α-Al2O3 on Ti(C,N) coated cemented carbide have been elucidated using scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy and Time-of-Flight Secondary Ion Mass Spectrometry. Further, the adhesive strength of the α-Al2O3–TixOy–Ti(C,N) interfaces was investigated using scratch adhesion testing.The present study confirmed that the as-deposited template consisted of a Ti4O7 phase which during subsequent deposition of the Al2O3 layer transformed to a Ti3O5 phase and that the grown Al2O3 layer consisted of 100% α-Al2O3. Furthermore, the results showed that the lowest interfacial strength within the multilayer structure was exhibited by the Ti(C,N)–TixOy interface and that the transformation of Ti4O7 to Ti3O5 in the template resulted in formation of pores in the Ti(C,N)-template interface lowering the interfacial strength even more. The use of surface analysis techniques such as Auger electron spectroscopy and especially Time-of-Flight Secondary Ion Mass Spectrometry enabled trace element analyses using depth profiling to characterise the thin interfacial layers in detail.
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| 2. |
- Lindahl, Erik, et al.
(author)
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Gas-Pulsed CVD for Film Growth in the Cu-Ni-N System
- 2012
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In: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 18:1-3, s. 10-16
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Journal article (peer-reviewed)abstract
- A new ternary solid solution, Cu3-xNix+yN, is prepared by gas-pulsed CVD at 260 degrees C. Gas pulses of the precursor mixtures Cu(hfac)2+NH3 and Ni(thd)2+NH3, separated by intermittent ammonia pulses, are employed for the deposition of Cu3N and Ni3N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6eV (band gap of Cu3N) to metallic (Ni3N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.
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