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Träfflista för sökning "WFRF:(Panchal V.) srt2:(2014)"

Sökning: WFRF:(Panchal V.) > (2014)

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1.
  • Panchal, V., et al. (författare)
  • Local electric field screening in bi-layer graphene devices
  • 2014
  • Ingår i: Frontiers of Physics. - : Frontiers Media SA. - 2296-424X. ; 2, s. 1-10
  • Tidskriftsartikel (refereegranskat)abstract
    • © 2014 Panchal, Giusca, Lartsev, Yakimova and Kazakova. We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG) and bi-layer graphene (2LG) devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.
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2.
  • Panchal, V., et al. (författare)
  • Visualisation of edge effects in side-gated graphene nanodevices
  • 2014
  • Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 4
  • Tidskriftsartikel (refereegranskat)abstract
    • Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of similar to 60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.
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