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Träfflista för sökning "WFRF:(Parry G) srt2:(2005-2009)"

Sökning: WFRF:(Parry G) > (2005-2009)

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2.
  • Swarup, Kamal, et al. (författare)
  • The auxin influx carrier LAX3 promotes lateral root emergence
  • 2008
  • Ingår i: Nature Cell Biology. - : Nature Publishing Group. - 1465-7392 .- 1476-4679. ; 10:8, s. 946-954
  • Tidskriftsartikel (refereegranskat)abstract
    • Lateral roots originate deep within the parental root from a small number of founder cells at the periphery of vascular tissues and must emerge through intervening layers of tissues. We describe how the hormone auxin, which originates from the developing lateral root, acts as a local inductive signal which re-programmes adjacent cells. Auxin induces the expression of a previously uncharacterized auxin influx carrier LAX3 in cortical and epidermal cells directly overlaying new primordia. Increased LAX3 activity reinforces the auxin-dependent induction of a selection of cell-wall-remodelling enzymes, which are likely to promote cell separation in advance of developing lateral root primordia.
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3.
  • Carvalho, A., et al. (författare)
  • Identification of the local vibrational modes of small nitrogen clusters in dilute GaAsN
  • 2007
  • Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 401-402, s. 339-342
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultra-high-resolution infra-red local vibrational mode (IR LVM) spectroscopy measurements together with density-functional calculations have been used to identify the signatures of close substitutional nitrogen (NAs) pairs in GaAs1 - x Nx alloys with concentrations of x < 0.025. We show that the presence of sub-peaks close to the NAs absorption band can be attributed to nitrogen pairs up to fourth neighbor position. Additionally, we suggest that the nitrogen pairs which give rise to the deepest levels below the conduction band edge are the first to be removed upon annealing
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4.
  • Piehowski, Paul D., et al. (författare)
  • Freeze-Etching and Vapor Matrix Deposition for ToF-SIMS Imaging of Single Cells
  • 2008
  • Ingår i: Langmuir. - : American Chemical Society (ACS). - 0743-7463 .- 1520-5827. ; 24:15, s. 7906-7911
  • Tidskriftsartikel (refereegranskat)abstract
    • Freeze-etching, the practice of removing excess surface water from a sample through sublimation into the vacuum of the analysis environment, has been extensively used in conjunction with electron microscopy. Here, we apply this technique to time-of-flight secondary-ion mass spectrometry (ToF-SIMS) imaging of cryogenically preserved single cells. By removing the excess water which condenses onto the sample in vacuo, a uniform surface is produced that is ideal for imaging by static SIMS. We demonstrate that the conditions employed to remove deposited water do not adversely affect cell morphology and do not redistribute molecules in the topmost surface layers. In addition, we found water can be controllably redeposited onto the sample at temperatures below −100 °C in vacuum. The redeposited water increases the ionization of characteristic fragments of biologically interesting molecules 2-fold without loss of spatial resolution. The utilization of freeze-etch methodology will increase the reliability of cryogenic sample preparations for SIMS analysis by providing greater control of the surface environment. Using these procedures, we have obtained high quality spectra with both atomic bombardment as well as C60+ cluster ion bombardment.
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  • Resultat 1-4 av 4

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