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Sökning: WFRF:(Pecz Bela) > (2023)

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1.
  • Pecz, Bela, et al. (författare)
  • On the Possibility of Realizing a 2D Structure of Si-N Bonds by Metal-Organic Chemical Vapor Deposition
  • 2023
  • Ingår i: Physica status solidi. B, Basic research. - : WILEY-V C H VERLAG GMBH. - 0370-1972 .- 1521-3951. ; 260:10
  • Tidskriftsartikel (refereegranskat)abstract
    • 2D SiN honeycomb monolayer structures predicted theoretically have been the focus of interest in materials science for a long time, most recently for their semiconducting and ferromagnetic properties. Herein, by investigating metal-organic chemical vapor deposition processes and direct heat treatment of epitaxial graphene in ammonia flow, the possibility of realizing a certain periodic 2D structure via Si-N bonds under epitaxial graphene on SiC (0001) is reported. The result is of interest because it is compatible with semiconductor material deposition technologies and future use in nanoscience and nanotechnology.
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2.
  • Sfuncia, Gianfranco, et al. (författare)
  • 2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface
  • 2023
  • Ingår i: CrystEngComm. - : ROYAL SOC CHEMISTRY. - 1466-8033. ; 25:41, s. 5810-5817
  • Tidskriftsartikel (refereegranskat)abstract
    • Beyond the predictions routinely achievable by first-principles calculations and using metal-organic chemical vapor deposition (MOCVD), we report a GaN monolayer in a buckled geometry obtained in confinement at the graphene/SiC interface. Conductive atomic force microscopy (C-AFM) was used to investigate vertical current injection across the graphene/SiC interface and to establish the uniformity of the intercalated regions. Scanning transmission electron microscopy (S/TEM) was used for atomic resolution imaging and spectroscopy along the growth direction. The experimentally obtained value of the buckling parameter, 1.01 & PLUSMN; 0.11 & ANGS;, adds to the existing knowledge of buckled GaN monolayers, which is based solely on predictive first-principles calculations. Our study reveals a discontinuity in the anticipated stacking sequence attributed to a few-layer graphitic-like GaN structure. Instead, we identify an atomic order suggestive of ultrathin gallium oxide Ga2O3, whose formation is apparently mediated by dissociative adsorption of oxygen onto the GaN monolayer. An atomic resolution image of an intercalated structure at a graphene/SiC interface along the growth direction which is determined as a buckled GaN monolayer at the immediate interface with an underlying SiC substrate and ultrathin Ga2O3 on top.
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