Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

• Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 x 60 mu m wide and 0.5 mu m long AlGaN/GaN HEMTs at a drain voltage of V-d = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance-voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers. (C) 2009 Elsevier Ltd. All rights reserved.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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transistors

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