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Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Schleeh, Joel, 1986 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Halonen, John, 1960 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Nilsson, Bengt, 1954 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Nilsson, Per-Åke, 1964 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Zeng, Lunjie, 1983 (author)
Chalmers tekniska högskola,Chalmers University of Technology
P., Ramvall (author)
Wadefalk, Niklas, 1973 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Zirath, Herbert, 1955 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Olsson, Eva, 1960 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Grahn, Jan, 1962 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
ISBN 9781457717536
2011
2011
English.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011. - 1092-8669. - 9781457717536
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  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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