| 1. |
- Cunha, Jose M. V., et al.
(författare)
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High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells
- 2021
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Ingår i: Solar RRL. - : John Wiley & Sons. - 2367-198X. ; 5:3
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Tidskriftsartikel (refereegranskat)abstract
- Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiOx) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se-2 (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 degrees C, the SiOx passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade-off between passivation effect and charge extraction, as demonstrated by the trade-off between open-circuit voltage (V-oc) and short-circuit current density (J(sc)) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiOx as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high-performance and low-cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiOx as a passivation material for energy conversion devices.
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| 2. |
- Monteiro, Margarida, et al.
(författare)
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X-ray Photoelectron Spectroscopy for Studying Passivation Architectures of Cu(In,Ga)Se-2 Cells
- 2021
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Ingår i: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781665419222 ; , s. 890-892
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Konferensbidrag (refereegranskat)abstract
- Optoelectronic devices are susceptible to interface recombination, which can have a detrimental impact on their performance. Therefore, there is an urgent need for tailored passivation strategies to reach a technological boost. In this contribution, two architectures based on passivated Cu(In, Ga)Se-2 solar cells are analyzed with X-ray photoelectron spectroscopy (XPS): one based on rear passivation with gold nanoparticle aggregates, and the other with Al2O3 as a front passivation layer. It is demonstrated that XPS can assist in the understanding of passivated devices from a chemical point of view, comprehend their limitations and push forward the development of future devices.
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| 3. |
- Oliveira, Kevin, et al.
(författare)
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SiOx patterned based substrates implemented in Cu(In,Ga)Se-2 ultrathin solar cells : optimum thickness
- 2021
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Ingår i: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781665419222 ; , s. 928-930
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Konferensbidrag (refereegranskat)abstract
- Interface recombination in sub-mu m optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2 %, a 1.3 % absolute improvement over the conventional substrate (without SiOx).
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