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- Karlsson, Fredrik, 1974-, et al.
(författare)
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Optical charging of self-assembled InAs/GaAs quantum dots
- 2002
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Ingår i: Physica scripta. T. - 0281-1847. ; 101, s. 140-142
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Tidskriftsartikel (refereegranskat)abstract
- It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the experimental conditions, such as excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusion of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots. This is proposed as an effective tool to populate single quantum dots with extra electrons, by purely optical means, in order to study phenomena involving charged excitons.
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| 2. |
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| 3. |
- Karlsson, Fredrik, 1974-, et al.
(författare)
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The influence of carrier diffusion on the formation of charged excitons in InAs/GaAs quantum dots
- 2002
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Ingår i: Physica. E, Low-Dimensional systems and nanostructures. - 1386-9477 .- 1873-1759. ; 13:2-4, s. 101-104
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Tidskriftsartikel (refereegranskat)abstract
- It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusivity of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots (QDs). This is proposed as an effective tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons. ⌐ 2002 Elsevier Science B.V. All rights reserved.
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| 4. |
- Moskalenko, Evgenii, 2000-, et al.
(författare)
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Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:19, s. 1953321-19533211
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Tidskriftsartikel (refereegranskat)abstract
- We study the photoluminescence of single InAs/GaAs self-assembled quantum dots for a range of excitation powers, excitation energies and sample temperatures 4 K30 K), this effect vanishes due to the essential decrease of the steady-state free electron concentration in the GaAs barrier as a result of thermally excited free holes appearing in the GaAs barrier valence band which provides an effective recombination channel for the free electrons. These experimental observations could be used as an effective tool to create and study charged excitons in quantum dots.
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| 5. |
- Moskalenko, Evgenii, 2000-, et al.
(författare)
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Formation of the charged exciton complexes in self-assembled InAs single quantum dots
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:11, s. 6787-6793
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Tidskriftsartikel (refereegranskat)abstract
- The low-temperature photoluminescence (PL) of the self-assembled InAs single quantum dots (QD) was studied using micro-PL setup. It was demonstrated that two emission lines down shifted in energy with respect to the ground state exciton PL line appeared in the PL spectrum. The PL intensity of these lines showed a periodic behavior with the excitation energy.
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