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- Moskalenko, E.S., et al.
(författare)
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Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:5, s. 754-756
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Tidskriftsartikel (refereegranskat)abstract
- The effect of infrared laser on charge state and emission intensity of the InAs/GaAs quantum dots (QDs)was analyzed. It was observed that the excitonic photoluminescence spectra of the QDs were redistributed in favor of the neutral excitation. It was also observed that photoluminescence intensity from the QDs increased by more than a factor of 5. The results showed that the emission intensity from the QDs can be effectively enhanced by optical means.
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- Moskalenko, Evgenii, 2000-, et al.
(författare)
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The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:24, s. 4896-4898
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Tidskriftsartikel (refereegranskat)abstract
- The impact of single and multi-quantum dots (QD) on the exposure by a low-energy laser was investigated using micro-photoluminescence. The presence of the low-energy laser effectively quenched the single QD luminescence, at low temperatures. An induced screening of a built-in electric field that played an important role as a carrier capture mechanism led to this effect. When the capture efficieny was increased by elevated crystal temperature, the influence of the low-energy laser decreased.
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