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Träfflista för sökning "WFRF:(Sedghi N.) srt2:(2013)"

Sökning: WFRF:(Sedghi N.) > (2013)

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1.
  • Engström, Olof, 1943, et al. (författare)
  • Analysis of electron capture at oxide traps by electric field injection
  • 2013
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:21
  • Tidskriftsartikel (refereegranskat)abstract
    • Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections.
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2.
  • Mitrovic, I. Z., et al. (författare)
  • Interface engineering of Ge using thulium oxide : Band line-up study
  • 2013
  • Ingår i: Microelectronic Engineering. - : Elsevier. - 0167-9317 .- 1873-5568. ; 109, s. 204-207
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper investigates the band line-up and optical properties (dielectric function) of Tm2O3/Ge gate stacks deposited by atomic layer deposition. X-ray photoelectron spectroscopy has been performed to ascertain the shallow core levels (Ge3d and Tm4d) in ultra-thin and bulk Tm2O3/Ge stacks as well as valence band maxima in Ge and bulk Tm2O3. The valence band offset of Tm2O3/Ge has been found to be 2.95 +/- 0.08 eV. Vacuum ultra violet variable angle spectroscopic ellipsometry studies reveal the indirect band gap nature of Tm2O3, with the value extracted from the Tauc method of 5.3 +/- 0.1 eV. A distinct absorption feature is observed at similar to 3.2 eV below the band gap of Tm2O3, and clearly distinguished from the Si and Ge critical points. A dielectric constant of 14 to 15 has been derived from the electrical measurements on 5 nm Tm2O3/epi Ge/Si gate stacks. The band line-up study of Tm2O3/Ge implies an acceptable barrier for holes (2.95 eV) and electrons (greater than 1.7 eV) for Ge MOSFET engineering.
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