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- Aberg, I, et al.
(author)
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Nanoscale tungsten aerosol particles embedded in GaAs
- 2002
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:16, s. 2976-2978
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Journal article (peer-reviewed)abstract
- GaAs containing buried nanoscale tungsten particles has been characterized electrically. The particles were produced using a special aerosol process and were embedded in GaAs by epitaxial overgrowth. Two different particle sizes were investigated separately. When the particle concentration was increased, a conductance drop of about 500 times was observed. A simulation model, based on a random distribution of the particles, was developed and used to support our findings. The major advantage of our method is the simplicity and low processing cost.
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3. |
- Martin, TP, et al.
(author)
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The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards
- 2003
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In: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036. ; 34:3-6, s. 179-184
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Journal article (peer-reviewed)abstract
- We present measurements of the potential profile of etched GaInAs/InP billiards and show that their energy gradients are an order of magnitude steeper than those of surface-gated GaAs/AlGaAs billiards. Previously observed in GaAs/AlGaAs billiards, fractal conductance fluctuations are predicted to be critically sensitive to the billiard profile. Here we show that, despite the increase in energy gradient, the fractal conductance fluctuations persist in the harder GaInAs/InP billiards. (C) 2004 Elsevier Ltd. All rights reserved.
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