| 1. |
- Drexler, C., et al.
(author)
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Reststrahlen Band assisted photocurrents in graphene
- 2013
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In: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467347174
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Conference paper (peer-reviewed)abstract
- We report on the experimental and theoretical study of the Reststrahlen Band assisted photocurrents in epitaxial grown graphene on SiC. We show that excitation of graphene with infrared radiation results in a dc current. We demonstrate that photocurrent in response to linearly polarized radiation exhibit a resonance enhancement in the frequency range of the Reststrahlen Band of the SiC substrate. By contrast the photocurrent excited by circularly polarized radiation is suppressed in the same spectral range. The developed theory is in agreement with the data and reveals a strong influence of the Reststrahl Band on the high frequency transport in graphene.
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| 2. |
- Jiang, C. Y., et al.
(author)
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Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO2 laser
- 2011
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In: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969 .- 1098-0121 .- 1550-235X. ; 84:12
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Journal article (peer-reviewed)abstract
- We report the study of the helicity-driven photocurrents in graphene excited by midinfrared light of a CO(2) laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates-under oblique incidence-an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular ac Hall effect and the circular photogalvanic effect. By studying the frequency dependence of the current in graphene layers grown on the SiC substrate, we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC.
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| 3. |
- Olbrich, P., et al.
(author)
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Reststrahl band-assisted photocurrents in epitaxial graphene layers
- 2013
-
In: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969 .- 1098-0121 .- 1550-235X. ; 88:24, s. 7-
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Journal article (peer-reviewed)abstract
- We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.
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