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Träfflista för sökning "WFRF:(Shen X. Y.) srt2:(2003-2004)"

Sökning: WFRF:(Shen X. Y.) > (2003-2004)

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1.
  • Li, Z-F, et al. (författare)
  • Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning
  • 2003
  • Ingår i: Journal of Electronic Materials. - : Springer Science Business Media. - 0361-5235 .- 1543-186X. ; 32:8, s. 913-916
  • Tidskriftsartikel (refereegranskat)abstract
    • Micro-photoluminescence (mu-PL) line scanning across a single V-groove, GaAs/AlGaAs quantum wire (QWR) has been performed at room temperature, revealing a clear spatial-dependence of the PL. After fitting each PL spectrum by multi-Gaussian line shapes, intensity profiles of each PL component from confined structures have been obtained as functions of the scanning position. The PL quenching of a side-wall quantum well (SQWL) has been recognized in a certain area in the vicinity of the QWR and is interpreted by carrier transfer into the QWR within effective transfer length. By simulating the carrier-transfer process from SQWL to QWR as a convolution of a step function for carrier distribution and a Gaussian function for exciting laser irradiance, the effective transfer length of about 1.8+/-0.3 mum has, therefore, been concluded.
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2.
  • Lu, W., et al. (författare)
  • Application of combinatorial material chip method on the improvement of quantum dots emission efficiency
  • 2004
  • Ingår i: Proceedings of the SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 5277:1, s. 99-108
  • Konferensbidrag (refereegranskat)abstract
    • The combinatorial material chip method has been used to study the emission efficiency of InAs/GaAs quantum dots. The photoluminescence spectroscopy is performed to obtain the rule of emission efficiency on the proton implantation dose. A pronounced enhancement of room temperature emission efficiency has been obtained by the optimized quantum dots process condition. The increment of emission efficiency up to 80 itmes has been observed. This effect may be resulted from both the proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV resulted from the intermixing of quantum dots. A linear dependence behavior has been observed for both the non-radiative recombination time and carrier relaxation time on the ion-implantation dose. The maximum enhancement of the photoluminescence is observed in the proton implantation dose of 1.0 x 1014 cm-2 followed by rapid thermal annealing at 700°C. These effects will be useful for the QDs' optoelectronic devices.
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