| 1. |
- Cooper, K., et al.
(författare)
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New Grid Scheduling and Rescheduling Methods in the GrADS Project
- 2004
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Konferensbidrag (refereegranskat)abstract
- Summary form only given. The goal of the Grid Application Development Software (GrADS) project is to provide programming tools and an execution environment to ease program development for the grid. We present recent extensions to the GrADS software framework: 1. A new approach to scheduling workflow computations, applied to a 3D image reconstruction application; 2. A simple stop/migrate/restart approach to rescheduling grid applications, applied to a QR 3. A process-swapping approach to rescheduling, applied to an N-body simulation. Experiments validating these methods were carried out on both the GrADS MacroGrid (a small but functional grid) and the MicroGrid (a controlled emulation of the grid) and the results were demonstrated at the SC2003 conference.
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| 2. |
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| 3. |
- Liu, T. B., et al.
(författare)
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Synthesis, structures and electrochemical properties of nitro- and amino-functionalized diiron azadithiolates as active site models of Fe-only hydrogenases
- 2004
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Ingår i: Chemistry - A European Journal. - : Wiley. - 0947-6539 .- 1521-3765. ; 10:18, s. 4474-4479
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Tidskriftsartikel (refereegranskat)abstract
- Complex [{(mu-SCH2)(2)N(4-NO2C6H4)}Fe-2(CO)(6)] (4) was prepared by the reaction of the dianionic intermediate [(mu-S)(2)Fe-2(CO)(6)](2-) and N,N-bis(chloromethyl)-4-nitroaniline as a biomimetic model of the active site of Fe-only hydrogenase. The reduction of 4 by Pd-C/H-2 under a neutral condition afforded complex [{(mu-SCH2)(2)N(4-NH2C6H4)}Fe-2(CO)(6)] (5) in 67% yield. Both complexes were characterized by IR, H-1 and C-13 NMR spectroscopy and MS spectrometry. The molecular structure of 4, as determined by X-ray analysis, has a butterfly 2Fe2S core and the aryl group on the bridged-N atom slants to the Fe(2) site. Cyclic voltammograms of 4 and 5 were studied to evaluate their redox properties. It was found that complex 4 catalyzed electrochemical proton reduction in the presence of acetic acid. A plausible mechanism of the electrocatalytic proton reduction is discussed.
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| 4. |
- Sun, S. G., et al.
(författare)
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Studies on a series of rhenium(I) bipyridyl photosensitive dyes
- 2004
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Ingår i: Youji huaxue. - 0253-2786. ; 24:8, s. 953-956
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Tidskriftsartikel (refereegranskat)abstract
- A series of rhemium(I) 2,2'-bipyridyl complexes [fac-(4,4'-di-COOEt-bpy)Re(CO)(3)(Xpy)PF6] (bpy = 2, 2'-bipyridine; py = pyridine; X = 3-methyl, 3-hydroxy, 3-amino, H) were synthesized. Their electrochemical properties, ground state electronic spectra and emission spectra were studied in acetonitrile. As the X group became more electron donating from H to 3-methyl, 3-hydroxy or 3-amino, the Re(II/I) oxidation potentials declined, the MLCT absorption maximum of the complex was changed little, the emission maximum blue-shifted, and the emission intensity and the fluorescence lifetime were decreased.
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| 5. |
- Sun, S. G., et al.
(författare)
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Synthesis of two novel rhenium(I) bipyridyl photosensitive dyes
- 2004
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Ingår i: Chinese Chemical Letters. - 1001-8417 .- 1878-5964. ; 15:8, s. 965-968
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Tidskriftsartikel (refereegranskat)abstract
- Two novel rhenium(I) 2, 2'-bipyridyl complexes, [(4,4'-di-COOEt-bipy) Re(CO)3 (NCCH3)PF6] and [(4,4'-di-COOEt-bipy) Re (CO)(3) (NCS)], a model complex [(4,4'-di-COOEt-bipy) Re (CO)(3) (pyridine)PF6], were synthesized. Their ground state electronic spectra and emission spectra were measured in acetonitrile. The MLCT absorption maximum of the complex exhibited a considerable red shift as the ligand changed from pyridine to CNCH3, or SCN.
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| 6. |
- Wu, D., et al.
(författare)
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A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
- 2003
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 24:3, s. 171-173
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Tidskriftsartikel (refereegranskat)abstract
- Proof-of-concept pMOSFETs with a strained-Si0.7Ge0.3 surface-channel deposited by selective epitaxy and a TiN/Al2O3/HfAIO(x)/Al2O3 gate stack grown by atomic layer chemical vapor deposition (ALD) techniques were fabricated. The Si0.7Ge0.3 pMOSFETs exhibited more than 30% higher current drive and peak transconductance than reference Si pMOSFETs with the same gate stack. The effective mobility for the Si reference coincided with the universal hole mobility curve for Si. The presence of a relatively low density of interface states, determined as 3.3x10(11) cm(-2) eV(-1), yielded a subthreshold slope of 75 mV/dec. for the Si reference. For the Si0.7Ge0.3 pMOSFETs, these values were 1.6x10(12) cm(-2) eV(-1) and 110 mV/dec., respectively.
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