| 1. |
- Shubina, Tatiana, et al.
(författare)
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Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:19
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Tidskriftsartikel (refereegranskat)abstract
- GaN/AlGaN quantum wells (QWs) of dominant N polarity with inversion domains (IDs), grown by molecular-beam epitaxy, have been studied. Two-band photoluminescence (PL), with the lower-energy band and an additional absorption edge related to the IDs, is observed in these QWs due to a difference in strain, electric field, and well width in the regions of different polarities. A time-resolved PL study reveals additionally strong inhomogeneity of the electric fields among the IDs. The intrinsic electric fields in the structures are relatively small-their maximal estimated value of 180 kV/cm is among the lowest ever reported. The low-scale electric fields indicate likely polarization deterioration in the N-polarity structures. These conditions are favorable for bright PL up to room temperature in 8-9-nm-wide wells.
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| 2. |
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| 3. |
- Shubina, Tatiana, et al.
(författare)
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Narrow-line excitonic photoluminescence in GaN/AlxGa1-xN quantum well structures with inversion domains
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:24, s. 241306-
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Tidskriftsartikel (refereegranskat)abstract
- Microphotoluminescence studies reveal strong and narrow lines of similar to1-meV minimal width in GaN/AlxGa1-xN quantum well (QW) structures having inversion domains (IDs). These narrow lines coexist in the spectra with broad (10-15 meV) peaks. The features of both kinds are characteristic for intersections of the IDs with QWs, which provide either three- or one-dimensional carrier confinement, depending on both the ID diameter and well width.
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| 4. |
- Shubina, Tatiana, et al.
(författare)
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Optical properties of GaN/AlGaN quantum wells with inversion domains
- 2003
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Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 195:3, s. 537-542
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Tidskriftsartikel (refereegranskat)abstract
- Two-band photoluminescence (PL) and respective absorption and reflection features are observed in GaN/AlGaN MBE-grown quantum well (QW) structures of dominant N polarity with inversion domains (IDs). The PL bands are related to transitions in the regions of different polarity, characterized by different strain and electric fields. A micro-PL study reveals sharp and narrow (1.5-2.5 meV) PL lines placed between the bands, which are tentatively attributed to recombination at localization sites associated with intersections of the QWs with the domains. Additionally, we demonstrate that the ID formation decreases the overall strength of the intrinsic electric fields in the QW structures.
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