| 1. |
- Baránková, Hana, et al.
(författare)
-
DLC coatings prepared by hollow cathodes at moderate pressure
- 2015
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- DLC coatings were prepared using the rf powered cylindrical and linear hollow cathodes. The deposition process is hybrid, combining both the PE CVD and PVD. A cylindrical graphite nozzle and graphite plates were used as targets. The gas mixture used in the deposition process was argon with acetylene. Compared to e.g. magnetron sputtering, the optimum content of acetylene is lower. The effect of the acetylene content in the gas mixture as well as rf power on the deposition rate and properties of the coatings are evaluated. The geometrical effect is studied, the cylindrical hollow cathode and the linear hollow cathode are compared and the transfer of the optimized process from the cylindrical into the linear hollow cathode is discussed.
|
|
| 2. |
- Barankova, Hana, et al.
(författare)
-
Reactive Deposition of TiN Films by Magnetron with Magnetized Hollow Cathode Enhanced Target
- 2018
-
Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 152, s. 123-127
-
Tidskriftsartikel (refereegranskat)abstract
- Magnetized Hollow Cathode Activated Magnetron in which the target is coupled with the hollow cathode magnetized by the magnetic field of the magnetron was tested in the reactive process of TiN deposition. Increased deposition rate compared to the Ti metal deposition rate was confirmed. The depositions as well as optical measurements were performed at several pressures in the reactor. The results of the TiN reactive deposition are presented and discussed, including the TiN deposition in pure nitrogen.
|
|
| 3. |
|
|
| 4. |
- Ma, D. L., et al.
(författare)
-
Optimal target sputtering mode for aluminum nitride thin film deposition by high power pulsed magnetron sputtering
- 2019
-
Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 160, s. 410-417
-
Tidskriftsartikel (refereegranskat)abstract
- Low surface roughness, low residual stress, and(002) textured aluminum nitride(AlN) thin films are favored for applications in microelectronic and optoelectronic devices. In this paper, AlN thin films were deposited by reactive high power pulsed magnetron sputtering(HPPMS). The effect of aluminum target sputtering mode and sputtering power on thin film residual stress, crystalline structure, surface roughness, and morphology of AlN thin films was studied. The results indicate that, with Al target sputtering mode transfer from metallic mode to transitional and compound modes, respectively, the number of Al species decrease, and ion-to-neutral ratio of Al species increase. Comparing the AIN thin film deposited in compound mode with that deposited in transitional mode, the latter exhibited lower surface roughness and residual stress. In addition, AlN thin film with (002) texture and lower residual stress is obtained by increasing sputtering power in transitional mode. For fabricating AIN film via reactive HPPMS with a particular (002) texture, low surface roughness, and residual stress, sputtering the target in the transitional mode with high sputtering power is optimal.
|
|
| 5. |
- Siliņš, Kaspars, 1987-
(författare)
-
Plasma Enhanced Chemical- and Physical- Vapor Depositions Using Hollow Cathodes
- 2018
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Development of coating deposition technologies, in terms of performance and costs, is an ongoing process. A promising class of deposition technologies are based on hollow cathode discharges.This thesis investigates performance of selected hollow cathode plasma sources developed at the Plasma group, at Uppsala University for coating deposition at moderate pressures. Amorphous carbon film deposition was investigated by Radio frequency (RF) Hollow Cathode Plasma Jet (RHCPJ) and Magnets-in-Motion (M-M) linear hollow cathode plasma sources. Titanium nitride (TiN) films were deposited by a magnetized Hollow Cathode Enhanced magnetron Target (HoCET). Aluminium nitride (AlN) deposition by RHCPJ was compared with High Power Impulse Magnetron Sputtering (HiPIMS).Amorphous carbon films were prepared on glass substrates without an interlayer. The AlN and TiN films were deposited on Si substrates. Optical emission spectroscopy was used to analyze plasma composition. The coating structure was analyzed by X-ray diffraction and Raman spectroscopy. The thickness of films was measured by scanning electron microscopy and profilometry. The TiN hardness was analyzed by microhardness test method and confirmed by nanoindentation analysis.Adherent amorphous carbon coating deposition process was transferred from RHCPJ to the M-M linear hollow cathode. Utilizing the latter plasma source, it was found that thick and adherent amorphous carbon coatings can be deposited in a range of 0.25% to 0.5% of C2H2 in Ar at constant a deposition pressure of 0.3 Torr and 1200 W of RF power. Deposition rates of 0.2 μm/min and 0.375 μm/min respectively were reached. Self-delaminating, thick (50 μm) amorphous carbon films can be deposited at a deposition rate of 2.5 μm/min at 2% C2H2. A non-linear relation was observed between the deposition rate and the C2H2 content.Utilizing the HoCET arrangement, high deposition rates of stoichiometric, polycrystalline TiN films are obtained. A maximum of 0.125 μm/min is obtained at 2.4% N2 in Ar, 1200 W RF power, 14 mTorr deposition pressure. TiN films deposited at 4 - 20% nitrogen contents displayed hardness values above 28 GPa reaching a maximum of 31.4 GPa at 5% N2.For a (002) oriented AlN film deposition the RHCPJ offers deposition rates of up to 150 nm/min. Using the HiPIMS at comparable deposition conditions the AlN films were achieved at a rate of 24 nm/min.
|
|
| 6. |
- Silins, Kaspars, 1987-, et al.
(författare)
-
Protective amorphous carbon coatings on glass substrates
- 2017
-
Ingår i: AIP Advances. - USA : American Institute of Physics (AIP). - 2158-3226. ; 7:11
-
Tidskriftsartikel (refereegranskat)abstract
- Thick amorphous carbon films were deposited by the Magnets-in-Motion (M-M) rf linear hollow cathode at varying acetylene contents in Ar in a hybrid PVD/PE-CVD process directly on glass substrates. The hollow cathode plates manufactured from graphite were used as the PVD target. The measurements show that the films can reach thickness of up to 50 mu m at deposition rates of up to 2.5 mu m/min. Scratch test measurements confirm that well adhering films several mu m thick can be achieved at C2H2 contents of up to 0.5%.
|
|
| 7. |
|
|
