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- Paskova, Tanja, et al.
(author)
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Mass transport growth and properties of hydride vapour phase epitaxy GaN
- 2001
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In: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 188:1, s. 447-451
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Journal article (peer-reviewed)abstract
- We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.
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