SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Sodervall U) srt2:(2002)"

Sökning: WFRF:(Sodervall U) > (2002)

  • Resultat 1-2 av 2
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  • Paskova, Tanja, et al. (författare)
  • Growth and separation related properties of HVPE-GaN free-standing films
  • 2002
  • Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 246:3-4, s. 207-214
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Hydride vapour phase epitaxial GaN layers with thicknesses in the range 10-150µm grown directly on sapphire or using metalorganic vapour phase deposited GaN templates have been separated by laser-induced lift-off technique. Both faces of the free-standing films have been studied by photoluminescence and high-resolution X-ray measurements and stress analysis has been performed. A comparison with as-grown films reveals the changes in the properties of the material after the separation process. The separation conditions are found to be responsible for the bowing in the free-standing GaN films while the type and intensity of emission bands, as well as defect and impurity distributions are related only to the growth conditions. The residual strain in the free-standing layers is attributed to both non-optimized separation conditions and non-uniform defect density in the films. © 2002 Elsevier Science B.V. All rights reserved.
  •  
2.
  • Peto, G, et al. (författare)
  • Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy
  • 2002
  • Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 81:1, s. 37-39
  • Tidskriftsartikel (refereegranskat)abstract
    • CoxTi1-x layers were deposited on Si (100) and on Si/Si80Ge20 (100) capped with 30- or 40-nm-thick Si at 650 degreesC substrate temperature at 1x10(-6) Pa pressure. The Co-silicide films grown by reactive deposition epitaxy were characterized by Rutherford backscattering-channeling, x-ray difraction, by depth profile analysis of the components, and by sheet resistance measurements. The Ti content of the deposited Co layers was between 0.1 and 8 at. %. The epitaxy of the layers on Si and on Si/Si80Ge20 improved by increasing the Ti concentration. The minimum yield of the channeling and the full width at half maximum value of the rocking curve of CoSi2 decreased. The sheet resisitance of the formed layers was also minimal in these cases. The method applied is promising to form epitaxial CoSi2 layers on SixGe1-x substrates.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-2 av 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy