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- Hahn, Oliver, 1993, et al.
(författare)
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Deterministic Gaussian conversion protocols for non-Gaussian single-mode resources
- 2022
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Ingår i: Physical Review A. - : American Physical Society. - 2469-9934 .- 2469-9926. ; 105:6
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Tidskriftsartikel (refereegranskat)abstract
- In the context of quantum technologies over continuous variables, Gaussian states and operations are typically regarded as freely available, as they are relatively easily accessible experimentally. In contrast, the generation of non-Gaussian states, as well as the implementation of non-Gaussian operations, pose significant challenges. This divide has motivated the introduction of resource theories of non-Gaussianity. As for any resource theory, it is of practical relevance to identify free conversion protocols between resources, namely, Gaussian conversion protocols between non-Gaussian states. Via systematic numerical investigations, we address the approximate conversion between experimentally relevant single-mode non-Gaussian states via arbitrary deterministic one-to-one mode Gaussian maps. First we show that cat and binomial states are approximately equivalent for finite energy, while this equivalence was previously known only in the infinite-energy limit. Then we consider the generation of cat states from photon-added and photon-subtracted squeezed states, improving over known schemes by introducing additional squeezing operations. The numerical tools that we develop also allow one to devise conversions of trisqueezed into cubic-phase states beyond previously reported performances. Finally, we identify various other conversions which instead are not viable.
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| 2. |
- He, Hans, et al.
(författare)
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Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene
- 2022
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Ingår i: Applied Physics Letters. - : American Institute of Physics Inc.. - 0003-6951 .- 1077-3118. ; 120:19
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Tidskriftsartikel (refereegranskat)abstract
- We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with a peak external quantum efficiency of η ∼85% for wavelengths λ = 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. © 2022 Author(s).
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| 3. |
- Stadler, Pascal, 1986, et al.
(författare)
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Transport properties of vertical heterostructures under light irradiation
- 2022
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Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 106:8
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Tidskriftsartikel (refereegranskat)abstract
- Electronic and transport properties of bilayer heterostructure under light irradiation are of fundamental interest to improve functionality of optoelectronic devices. We theoretically study the modification of transport properties of bilayer graphene and bilayer heterostructures under a time-periodic external light field. The bulk electronic and transport properties are studied in a Landauer-type configuration by using the nonequilibrium Green's function formalism. To illustrate the behavior of the differential conductance of a bilayer contact under light illumination, we consider tight-binding models of bilayer graphene and graphene/hexagonal boron-nitride heterostructures. The nonadiabatic driving induces sidebands of the original band structure and opening of gaps in the quasienergy spectrum. In transport properties, the gap openings are manifested in a suppression of the differential conductance. In addition to suppression, an external light field induces an enhancement of the differential conductance if photoexcited electrons tunnel into or out of a Van Hove singularity.
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