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Origin of strong ph...
Origin of strong photoluminescence polarization in GaNP nanowires
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- Filippov, Stanislav (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Sukrittanon, Supanee (författare)
- University of California, La Jolla, USA
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- Kuang, Yanjin (författare)
- University of California, La Jolla, USA
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- Tu, Charles W. (författare)
- University of California, La Jolla, USA
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- Persson, Per O. Å. (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Chen, Weimin (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Buyanova, Irina (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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(creator_code:org_t)
- 2014-08-29
- 2014
- Engelska.
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 14:9, s. 5264-5269
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The III-V semiconductor nanowires (NWs) have a great potential for applications in a variety of future electronic and photonic devices with enhanced functionality. In this work, we employ polarization resolved micro-photoluminescence (µ-PL) spectroscopy to study polarization properties of light emissions from individual GaNP and GaP/GaNP core/shell nanowires (NWs) with average diameters ranging between 100 and 350 nm. We show that the near-band-edge emission, which originates from the GaNP regions of the NWs, is strongly polarized (up to 60 % at 150 K) in the direction perpendicular to the NW axis. The polarization anisotropy can be retained up to room temperature. This polarization behavior, which is unusual for zinc blende NWs, is attributed to local strain in the vicinity of the N-related centers participating in the radiative recombination and to preferential alignment of their principal axis along the growth direction. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to tailor the polarization anisotropy of III-V nanowires, advantageous for their applications as nanoscale emitters of polarized light.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Nanowire; photoluminescence; polarization
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