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Träfflista för sökning "WFRF:(Szalkai D.) srt2:(2014)"

Sökning: WFRF:(Szalkai D.) > (2014)

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1.
  • Issa, F., et al. (författare)
  • Nuclear radiation detectors based on 4H-SiC p+-n junction
  • 2014
  • Ingår i: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013. - 9783038350101 ; , s. 1046-1049
  • Konferensbidrag (refereegranskat)abstract
    • Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.
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2.
  • Issa, F., et al. (författare)
  • Radiation silicon carbide detectors based on ion implantation of boron
  • 2014
  • Ingår i: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 61:4, s. 2105-2111
  • Tidskriftsartikel (refereegranskat)abstract
    • Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I-SMART (Innovative Sensor for Material Ageing and Radiation Testing), we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ - layer, and then implanted by boron ( 10 B) to realize the NCL. The second type was based on p+ - layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.
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3.
  • Vervisch, Vanessa, et al. (författare)
  • Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor
  • 2014
  • Ingår i: Materials Research Society Symposium Proceedings. - : Springer Science and Business Media LLC.
  • Konferensbidrag (refereegranskat)abstract
    • The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.
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  • Resultat 1-3 av 3
Typ av publikation
konferensbidrag (2)
tidskriftsartikel (1)
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refereegranskat (3)
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Klix, A (3)
Hallén, Anders. (3)
Kuznetsov, A. (3)
Lazar, M (3)
Ottaviani, L. (3)
Szalkai, D. (3)
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Vermeeren, L. (3)
Lyoussi, A. (3)
Issa, F. (2)
Vervisch, V. (2)
Palais, O. (2)
Biondo, S (1)
Vervisch, Vanessa (1)
Issa, Fatima (1)
Vervisch, W. (1)
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