| 1. |
- Chen, Weimin, 1959-, et al.
(författare)
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Optical and Microwave Double Resonance of III-nitrides
- 1999
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Ingår i: Joint International Meeting the 196th Meeting of The Electrochemical Society ECS and the 1999 Fall Meeting of The Electrochemical Society of Japan ECSJ,1999. ; , s. 764-
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
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| 2. |
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| 3. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
- 1999
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 75:24, s. 3781-
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Tidskriftsartikel (refereegranskat)abstract
- The effect of growth temperature on the optical properties of GaAs/GaNxAs1-x quantum wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in growth temperature up to 580 °C is shown to improve the optical quality of the structures, while still allowing one to achieve high (>3%) N incorporation. This conclusion is based on: (i) an observed increase in intensity of the GaNAs-related near-band-edge emission; (ii) a reduction in band-edge potential fluctuations, deduced from the analysis of the PL line shape; and (iii) a decrease in concentration of some extended defects detected under resonant excitation of the GaNAs. The thermal quenching of the GaNAs-related PL emission, however, is almost independent of the growth temperature and is attributed to a thermal activation of an efficient nonradiative recombination channel located in the GaNAs layers.
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| 4. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy
- 1999
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 216:1, s. 125-129
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Tidskriftsartikel (refereegranskat)abstract
- A detailed photoluminescence (PL) study reveals that the low-temperature PL emission in GaNAs epilayers and GaAs/GaNxAs1 - x quantum well structures grown by molecular beam epitaxy is governed by recombination of localized excitons. This conclusion is based on the analysis of the PL lineshape, its dependence on the excitation power and measurement temperature, as well as PL transient data. The depth of the localization potential is estimated as about 60 meV, varying slightly among the different structures.
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| 5. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
- 1999
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 75:4, s. 501-
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Tidskriftsartikel (refereegranskat)abstract
- The mechanism for low-temperature photoluminescence (PL) emissions in GaNAs epilayers and GaAs/GaNxAs1 - x quantum well (QW) structures grown by molecular-beam epitaxy is studied in detail, employing PL, PL excitation, and time-resolved PL spectroscopies. It is shown that even though quantum confinement causes a strong blueshift of the GaNAs PL emission, its major characteristic properties are identical in both QW structures and epilayers. Based on the analysis of the PL line shape, its dependence on the excitation power and measurement temperature, as well as transient data, the PL emission is concluded to be caused by a recombination of excitons trapped by potential fluctuations in GaNAs.
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| 6. |
- Rehnberg-Laiho, L, et al.
(författare)
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Helicobacter antibodies in Finnish centenarians
- 1999
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Ingår i: The journals of gerontology. Series A, Biological sciences and medical sciences. - : Oxford University Press (OUP). - 1079-5006 .- 1758-535X. ; 54:8, s. M400-M403
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Tidskriftsartikel (refereegranskat)
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| 7. |
- Szymanski, J. J., et al.
(författare)
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A study of the decay mu –> e gamma by the MEGA experiment
- 1996
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Ingår i: Proceedings, 9th Meeting, DPF'96, Minneapolis, USA, August 11-15, 1996. Vol. 1, 2.. ; , s. 1450-1452
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Konferensbidrag (refereegranskat)
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