| 1. |
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| 2. |
- Sodergren, Erica, et al.
(författare)
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The genome of the sea urchin Strongylocentrotus purpuratus.
- 2006
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 1095-9203 .- 0036-8075. ; 314:5801, s. 941-52
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Tidskriftsartikel (refereegranskat)abstract
- We report the sequence and analysis of the 814-megabase genome of the sea urchin Strongylocentrotus purpuratus, a model for developmental and systems biology. The sequencing strategy combined whole-genome shotgun and bacterial artificial chromosome (BAC) sequences. This use of BAC clones, aided by a pooling strategy, overcame difficulties associated with high heterozygosity of the genome. The genome encodes about 23,300 genes, including many previously thought to be vertebrate innovations or known only outside the deuterostomes. This echinoderm genome provides an evolutionary outgroup for the chordates and yields insights into the evolution of deuterostomes.
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| 3. |
- Nene, Vishvanath, et al.
(författare)
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Genome sequence of Aedes aegypti, a major arbovirus vector.
- 2007
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Ingår i: Science (New York, N.Y.). - : American Association for the Advancement of Science (AAAS). - 1095-9203 .- 0036-8075. ; 316:5832, s. 1718-23
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Tidskriftsartikel (refereegranskat)abstract
- We present a draft sequence of the genome of Aedes aegypti, the primary vector for yellow fever and dengue fever, which at approximately 1376 million base pairs is about 5 times the size of the genome of the malaria vector Anopheles gambiae. Nearly 50% of the Ae. aegypti genome consists of transposable elements. These contribute to a factor of approximately 4 to 6 increase in average gene length and in sizes of intergenic regions relative to An. gambiae and Drosophila melanogaster. Nonetheless, chromosomal synteny is generally maintained among all three insects, although conservation of orthologous gene order is higher (by a factor of approximately 2) between the mosquito species than between either of them and the fruit fly. An increase in genes encoding odorant binding, cytochrome P450, and cuticle domains relative to An. gambiae suggests that members of these protein families underpin some of the biological differences between the two mosquito species.
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| 4. |
- Bauer, K, et al.
(författare)
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Perforin deficiency attenuates collagen-induced arthritis
- 2005
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Ingår i: Arthritis Research and Therapy. - : Springer Science and Business Media LLC. - 1478-6362 .- 1478-6354. ; 7:4, s. 877-884
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Tidskriftsartikel (refereegranskat)abstract
- Collagen-induced arthritis ( CIA), an approved animal model for rheumatoid arthritis, is thought to be a T cell-dependent disease. There is evidence that CD8(+) T cells are a major subset controlling the pathogenesis of CIA. They probably contribute to certain features of disease, namely tissue destruction and synovial hyperplasia. In this study we examined the role of perforin (pfp), a key molecule of the cytotoxic death pathway that is expressed mainly in CD8(+) T cells, for the pathogenesis of CIA. We generated DBA/1J mice suffering from mutations of the pfp molecule, DBA/1J-pfp(-/-), and studied their susceptibility to arthritis. As a result, pfp-deficient mice showed a reduced incidence (DBA/1J-pfp(+/+), 64%; DBA/1J-pfp(-/-), 54%), a slightly delayed onset ( onset of disease: DBA/1J-pfp(+/+), 53 +/- 3.6; DBA/1J-pfp(-/-), 59 +/- 4.9 ( mean SEM), and milder form of the disease ( maximum disease score: DBA/1J-pfp(+/+), 7.3 +/- 1.1; DBA/1J-pfp(-/-), 3.4 +/- 1.4 ( mean SEM); P < 0.05). Concomitantly, peripheral T cell proliferation in response to the specific antigen bovine collagen II was increased in pfp(-/-) mice compared with pfp(+/+) mice, arguing for an impaired killing of autoreactive T cells caused by pfp deficiency. Thus, pfp-mediated cytotoxicity is involved in the initiation of tissue damage in arthritis, but pfp-independent cytotoxic death pathways might also contribute to CIA.
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| 5. |
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| 6. |
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| 7. |
- Thinh, N.Q., et al.
(författare)
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Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:12
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Tidskriftsartikel (refereegranskat)abstract
- A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Gai defects (Gai-A and Gai-B). New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Gai-B defect was estimated to be deeper than ~1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects. ©2005 The American Physical Society.
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| 8. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Effects of N incorporation on the electronic structure of GaNP : Origin of the 2.87 eV optical transition
- 2005
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Konferensbidrag (refereegranskat)abstract
- Temperature dependent photoluminescence excitation (PLE) spectroscopy is employed to evaluate basic physical properties of the 2.87 eV absorption peak, recently discovered (I. A. Buyanova et al, PRB 69, 201303 (2004)) in the GaNxP1-x alloys. Whereas appearance of this transition is found to be facilitated by incorporation of N and also H atoms, its intensity does not scale with N content. This questions a possible association of this feature with a N-related localized state. Based on the results of temperature dependent measurements, the involved state is concluded to have a non-$\Gamma $ character. Excitation of the known N-related localized states via this state is found to be non-selective, opposed to that between the N-related centers. The observed properties are shown to be hardly consistent with those predicted for the higher lying localized state of the isolated N atom derived from the Γ conduction band minimum (CBM). Alternative explanations for the ``2.87 eV'' state as being due to either a t2 component of the X3c (or L1c CBM or a level arising from a complex of N and H (in some form) are also discussed.
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| 9. |
- Buyanova, Irina, 1960-, et al.
(författare)
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On a possible origin of the 2.87 eV optical transition in GaNP
- 2006
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 18:2, s. 449-457
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Tidskriftsartikel (refereegranskat)abstract
- Temperature dependent photoluminescence excitation spectroscopy is employed to evaluate basic physical properties of the 2.87 eV absorption peak, recently discovered for the GaNxP1-x alloys. Whereas the appearance of this transition is found to be facilitated by incorporation of N and also H atoms, its intensity does not scale with the N content in the alloys. This questions the possible association of this feature with an N-related localized state. On the basis of the results of temperature dependent measurements, it is concluded that the state involved has a non-Γ character. Excitation of the known N-related localized states via this state is found to be non-selective, unlike that between the N-related centres. The observed properties are shown to be barely consistent with those predicted for the higher lying localized state of the isolated N atom derived from the Γ conduction band minimum (CBM). Alternative explanations for the '2.87 eV' state as being due to either a t 2 component of the X3c (or L1c) CBM or a level arising from a complex of N and H (in some form) are also discussed. © 2006 IOP Publishing Ltd.
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| 10. |
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| 11. |
- Chen, Weimin, 1959-, et al.
(författare)
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Defects in dilute nitrides
- 2005
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Konferensbidrag (refereegranskat)abstract
- We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As-Ga antisites and Ga-i self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.
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| 12. |
- Chen, Weimin, et al.
(författare)
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Point defects in dilute nitride III-N-As and III-N-P
- 2006
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Konferensbidrag (refereegranskat)abstract
- We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride system s-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As-Ga, antisites and Ga-i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides. (c) 2005 Elsevier B.V. All rights reserved.
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| 13. |
- Felici, M, et al.
(författare)
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High Energy Optical Transitions in Ga(PN) : Contribution from Perturbed Valence Band
- 2005
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Ingår i: AIP Conference Proceedings / Volume 772. - : American Institute of Physics (AIP). - 0735402574 ; , s. 265-
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Konferensbidrag (refereegranskat)abstract
- The GaP1–xNx conduction band is investigated experimentally (by excitation photoluminescence) andtheoretically (by pseudopotential supercells) for N concentrations up to x=3.5%and photon energies ranging from the optical absorption edge to3.2 eV. With increasing x: (i) a direct-like absorption edgedevelops smoothly and red-shifts rapidly overtaking energy-pinned cluster states; (ii)a broad absorption plateau appears between the X1c and the1c critical points of GaP; (iii) the 1c absorption edgebroadens and gradually disappears. Empirical pseudopotential calculations for GaP1-xNx randomalloy supercells account well for all the PLE results byconsidering N induced changes in the valence band overlooked sofar. ©2005 American Institute of Physics
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| 14. |
- Jiao, Liping, et al.
(författare)
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Persistent toxic substances in remote lake and coastal sediments from Svalbard, Norwegian Arctic : Levels, sources and fluxes
- 2009
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Ingår i: Environmental Pollution. - : Elsevier. - 0269-7491 .- 1873-6424. ; 157:4, s. 1342-1351
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Tidskriftsartikel (refereegranskat)abstract
- Surface sediments from remote lakes and coastal areas from Ny-Ålesund, Svalbard, Norwegian Arctic were analyzed for polycyclic aromatic hydrocarbons (PAHs), polybrominated diphenyl ethers (PBDEs), polychlorinated biphenyls (PCBs) and organochlorine pesticides (OCPs). Relatively high levels of PAHs were encountered from several lakes from Ny-Ålesund, which were within the range of levels reported for European high mountain lakes and some urban/industrialized areas in the world, pointing to the role of remote Arctic lakes as potential reservoir of semi-volatile organic compounds. Specific patterns of PBDEs were observed, showing higher concentrations of lower brominated compounds such as BDE-7, 17 and 28. Estimated surface sediment fluxes of PAHs in Ny-Ålesund remote lakes were similar to those observed for some European high mountain lakes. The current PAH levels in sediments from three lakes exceeded Canadian sediment quality guidelines, suggesting the presence of possible risks for aquatic organisms and the need for further studies.
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| 15. |
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| 16. |
- Richards, Stephen, et al.
(författare)
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The genome of the model beetle and pest Tribolium castaneum.
- 2008
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Ingår i: Nature. - 1476-4687. ; 452:7190, s. 949-55
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Tidskriftsartikel (refereegranskat)abstract
- Tribolium castaneum is a representative of earth’s most numerous eukaryotic order, a powerful model organism for the study of generalized insect development, and also an important pest of stored agricultural products. We describe its genome sequence here. This omnivorous beetle has evolved an ability to interact with a diverse chemical environment as evidenced by large expansions in odorant and gustatory receptors, as well as p450 and other detoxification enzymes. Developmental patterns in Tribolium are more representative of other arthropods than those found in Drosophila, a fact represented in gene content and function. For one, Tribolium has retained more ancestral genes involved in cell-cell communication than Drosophila, and some are expressed in the growth zone crucial for axial elongation in short germ development. Systemic RNAi in T. castaneum appears to use mechanisms distinct from those found in C. elegans, but nevertheless offers similar power for the elucidation of gene function and identification of targets for selective insect control.
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| 17. |
- Vorona, Igor, et al.
(författare)
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Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:22, s. 222110-
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Tidskriftsartikel (refereegranskat)abstract
- Dilute-nitride Ga0.44In0.56NyP1-y alloys with y=0-0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect. © 2005 American Institute of Physics.
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| 18. |
- Wang, Xingjun, et al.
(författare)
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Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials
- 2009
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 95, s. 241904-
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Tidskriftsartikel (refereegranskat)abstract
- Opticallydetected magnetic resonance measurements are carried out to study formationof Ga interstitial-related defects in Ga(In)NAs alloys. The defects, whichare among dominant nonradiative recombination centers that control carrier lifetimein Ga(In)NAs, are unambiguously proven to be common grown-in defectsin these alloys independent of the employed growth methods. Thedefects formation is suggested to become thermodynamically favorable because ofthe presence of nitrogen, possibly due to local strain compensation.
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| 19. |
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