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Sökning: WFRF:(Tukiainen Antti) > (2022)

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1.
  • Palmolahti, Lauri, et al. (författare)
  • Pinhole-resistant nanocrystalline rutile TiO2 photoelectrode coatings
  • 2022
  • Ingår i: Acta Materialia. - : Elsevier BV. - 1359-6454. ; 239
  • Tidskriftsartikel (refereegranskat)abstract
    • Atomic layer deposited (ALD) TiO2 thin films have a wide range of applications in photonics which are, however, limited by the chemical instability of the amorphous as-deposited TiO2. Post-deposition annealing is required for improving the performance by inducing phase transitions and oxide defects. ALD precursor traces remaining in the TiO2 film affect the thermally-induced processes but the understanding of the effect of growth temperature on precursor traces in the film as well as on the thermally-induced processes is weak. In this study 30 nm ALD TiO2 was grown on Si wafer from tetrakis(dimethylamido)titanium and water at 100–200 °C. TiO2 was subsequently annealed in vacuum at 200–500 °C. Increasing the growth temperature decreased the amount of N bearing precursor traces and thus makes the TiO2 more easily reducible. The reduction takes place simultaneously with the crystallization and formation of O1− defects. Vacuum annealing of TiO2 with less than 0.3 at% of N results in nanocrystalline rutile whereas samples with more N containing traces crystallized as microcrystalline anatase. Nanocrystalline rutile TiO2 was chemically stable and resistant to the dissolution at the grain boundaries under alkaline conditions making it a suitable material for protective photoelectrode coatings used in artificial photosynthesis.
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2.
  • Saari, Jesse, et al. (författare)
  • Tunable Ti 3+ -Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO 2
  • 2022
  • Ingår i: Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 126:9, s. 4542-4554
  • Tidskriftsartikel (refereegranskat)abstract
    • Amorphous titania (am.-TiO2) has gained wide interest in the field of photocatalysis, thanks to exceptional disorder-mediated optical and electrical properties compared to crystalline TiO2. Here, we study the effects of intrinsic Ti3+ and nitrogen defects in am.-TiO2 thin films via the atomic layer deposition (ALD) chemistry of tetrakis(dimethylamido)titanium(IV) (TDMAT) and H2O precursors at growth temperatures of 100-200 °C. X-ray photoelectron spectroscopy (XPS) and computational analysis allow us to identify structural disorder-induced penta- and heptacoordinated Ti4+ ions (Ti5/7c4+), which are related to the formation of Ti3+ defects in am.-TiO2. The Ti3+-rich ALD-grown am.-TiO2 has stoichiometric composition, which is explained by the formation of interstitial peroxo species with oxygen vacancies. The occupation of Ti3+ 3d in-gap states increases with the ALD growth temperature, inducing both visible-light absorption and electrical conductivity via the polaron hopping mechanism. At 200 °C, the in-gap states become fully occupied extending the lifetime of photoexcited charge carriers from the picosecond to the nanosecond time domain. Nitrogen traces from the TDMAT precursor had no effect on optical properties and only little on charge transfer properties. These results provide insights into the charge transfer properties of ALD-grown am.-TiO2 that are essential to the performance of protective photoelectrode coatings in photoelectrochemical solar fuel reactors.
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