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| 2. |
- Kilpelainen, S., et al.
(författare)
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Stabilization of Ge-rich defect complexes originating from E centers in Si(1-x)Ge(x):P
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:13, s. 132103-
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Tidskriftsartikel (refereegranskat)abstract
- Thermal evolution of vacancy complexes was studied in P-doped ([P] = 10(18) cm(-3)) proton irradiated Si(1-x)Ge(x) with Ge contents of 10%, 20%, and 30% in the range of 250-350 degrees C using positron annihilation spectroscopy. The radiation damage recovers in the course of anneals but the final state differs from that in as-grown samples indicating the presence of small Ge clusters in the samples, contrary to the initially random Ge distribution. The activation energy for the annealing process was estimated to be 1.4+/-0.3 eV and attributed to the dissociation energy of the vacancy-phosphorus-germanium (V-P-Ge) complex.
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| 3. |
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| 4. |
- Segercrantz, N., et al.
(författare)
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Defect studies in MBE grown GaSb1-x Bi x layers
- 2014
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Ingår i: AIP Conference Proceedings. - : AIP Publishing LLC. - 1551-7616 .- 0094-243X. ; 1583, s. 174-177
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Konferensbidrag (refereegranskat)abstract
- Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb 1-x Bi x on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0-0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.
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| 5. |
- Segercrantz, N, et al.
(författare)
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Defect studies in MBE grown GaSbBi layers
- 2013
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Ingår i: 27th International Conference on Defects in Semiconductors 2013, Bologna, Italy, 2013.
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Konferensbidrag (refereegranskat)
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| 6. |
- Segercrantz, N., et al.
(författare)
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Point defect balance in epitaxial GaSb
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:8, s. art. no. 082113-
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Tidskriftsartikel (refereegranskat)abstract
- Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.
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