POLYSILICON MESOSCOPIC WIRES COATED BY Pd AS H(2) SENSORS

• In this work a novel monocrystalline silicon nanowires array has been investigated and presented as hydrogen sensor, designed and fabricated by employing high resolution microfabrication techniques and featuring a high surface/volume ratio. The nanowires arrays makes up the channel of a MOS system, palladium-silicon dioxide-silicon. Several devices have been fabricated by using a SOI (Silicon On Insulator) substrate, Source and Drain have been geometrically patterned by optical lithography and Boron p-doped. Electron Beam Litography (EBL) defined the MOS channel made up of a nanowires array of different length and width in different transistors. The pads of Source and Drain have been manufactured with an aluminium film deposition. The Gate has been fabricated with a grown silicon oxide layer (17.4 nm) and Palladium has been used as gate contact. Polarizing and exposing the device to H(2)/N(2) cycles at different concentrations some preliminary measurements have been successfully conducted.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

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