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- Rostami, Habib, et al.
(författare)
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Layer and orbital interference effects in photoemission from transition metal dichalcogenides
- 2019
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Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 100:23
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a k . p Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the (K) over bar valley of MoS2. In SL MoS2, we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo d orbitals. In BL MoS2, an additional interlayer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS2.
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