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- Nordell, Nils, et al.
(författare)
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Boron implantation and epitaxial regrowth studies of 6H SiC
- 1998
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 27:7, s. 833-837
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Tidskriftsartikel (refereegranskat)abstract
- Implantation of B has been performed into an epitaxially grown layer of 6H SiC, at two different B concentrations, 2 x 10(16) cm(-3) and 2 x 10(18) cm(-3). Subsequently, an epitaxial layer was regrown on the B implanted layer. The samples were investigated by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). In the highly B-doped layers plate-like defects were found, associated with large strain fields, and an increased B concentration. These defects were stable at the originally implanted region during regrowth and at anneal temperatures up to 1700 degrees C. In the samples implanted with the lower B concentration, no crystal defects could be detected by TEM. No threading dislocations or other defects were observed in the regrown epitaxial layer, which shows the possibility to grow a layer with high crystalline quality on B implanted 6H SiC. By SIMS, it was found that B piles up at the interface to the regrown layer, which could be explained by enhanced diffusion from an increased concentration of point defects created by implantation damage in the region. B is also spread out into the original crystal and in the regrown layer at a concentration of below 2 x 10(16) cm(-3), with a diffusion constant estimated to 1.3 x 10(-12) cm(2)s(-1). This diffusion is most probably not driven by implantation damage, but by intrinsic defects in the grown crystal. Our investigation shows that the combination of implantation and subsequent regrowth techniques could be used in SiC for building advanced device structures, with the crystal quality in the regrown layer not being deteriorated by crystal defects in the implanted region. A device process using B implantation and subsequent regrowth could on the other hand be limited by the diffusion of B.
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- Persson, P. O. Å, et al.
(författare)
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Transmission electron microscopy investigation of defects in B-implanted 6H-SiC
- 1998
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Ingår i: Silicon carbide, III-nitrides and related materials : ICSCIII-N'97. - : Trans Tech Publications Inc.. - 0878497900 ; , s. 413-416
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Konferensbidrag (refereegranskat)abstract
- Silicon carbide is due to its wide bandgap, high saturated electron drift velocity, high electric breakdown field and high thermal conductivity a suitable material for electron devices operating at high temperatures, high powers and high frequencies.[1,2] In order for SIC to reach its full potential in device technology, doping is essential. Usually ion implantation is used for doping since diffusion is difficult in SiC. Boron is a useful material for implantation because of its low atomic weight and greater penetration depth than other accepters, yet very few studies have been conducted on B-implanted 6H-SiC. [3,4] In this investigation we have used transmission electron microscopy (TEM) to study structural defects that are found in B-implanted 6H-SiC layers.
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