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- Wilhelmsson, O., et al.
(författare)
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Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering
- 2006
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 291:1, s. 290-300
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Tidskriftsartikel (refereegranskat)abstract
- The formation of ternary compounds within the Ti-Al-C system was studied by magnetron sputtering for thin-film deposition and first-principles calculations for phase stability. As-deposited films were characterized with X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM). The hardness and Young's moduli of the material were studied by nanoindentation. Epitaxial and phase-pure films of Mn+1AXn phases Ti3AlC2 and Ti2AlC as well as the perovskite phase Ti3AlC were deposited on Al2O3(00l) wafers kept at temperatures between 800 and 900 °C. The only ternary phases observed at low temperatures (300 °C) were Ti3AlC and cubic (Ti,Al)C, the latter can be described as a metastable solid solution of Al in TiC similar to the more studied (Ti,Al)N system. The difficulties to form MAX phases at low substrate temperatures were attributed of requirement for a sufficient diffusivity to partition the elements corresponding to the relatively complex crystal structures with long c-axes. While MAX-phase synthesis at 800 °C is significantly lower than contemporary bulk sintering processes, a reduction of the substrate temperature towards 300 °C in the present thin-film deposition experiments resulted in stacking sequence variations and the intergrowth of (Ti,Al)C. © 2006 Elsevier B.V. All rights reserved.
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- Wilhelmsson, O., et al.
(författare)
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Structural, electrical and mechanical characterization of magnetron-sputtered V-Ge-C thin films
- 2008
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Ingår i: Acta Materialia. - : Elsevier BV. - 1359-6454 .- 1873-2453. ; 56:11, s. 2563-2569
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Tidskriftsartikel (refereegranskat)abstract
- V2GeC MAX-phase thin films were deposited by DC magnetron sputter epitaxy in the temperature range 450-850 °C. The MAX-phase nucleates directly on (0 0 0 l)-oriented sapphire-wafer substrates without the need for a seed layer. The films contain, however, a small fraction of binary vanadium carbide (VCx) inclusions. X-ray diffraction analysis furthermore shows that these inclusions partly consist of the ordered superstructure V8C7. The amount of Ge in the films decreases at higher temperatures, which can be attributed to Ge evaporation. At temperatures below 450 °C the films consist of polycrystalline Ge and an X-ray amorphous carbide phase attributed to VCx or V2C. No MAX-phase was observed in this temperature region. The electrical and mechanical properties of the films were characterized. © 2008 Acta Materialia Inc.
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