| 1. |
- Andrearczyk, T., et al.
(författare)
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Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
- 2009
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Ingår i: Acta Physica Polonica A. - 0587-4246. ; 116:5, s. 901-903
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Konferensbidrag (refereegranskat)abstract
- We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
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| 2. |
- Andrearczyk, T., et al.
(författare)
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Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
- 2008
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Ingår i: ACTA PHYSICA POLONICA A. - 0587-4246. ; 114:5, s. 1049-1054
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Konferensbidrag (refereegranskat)abstract
- We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic Ga0.92Mn0.08As layer. The results reveal hysteresis-like behaviors of low field magneto resistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
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| 3. |
- Figielski, T., et al.
(författare)
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Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:5
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Tidskriftsartikel (refereegranskat)abstract
- The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.
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| 4. |
- Janik, E., et al.
(författare)
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ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:13
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Tidskriftsartikel (refereegranskat)abstract
- ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >.
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| 5. |
- Wosinski, T., et al.
(författare)
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Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer
- 2007
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Ingår i: Physica Status Solidi. A, Applied Research. - : Wiley. - 0031-8965. ; 204:2, s. 472-476
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Tidskriftsartikel (refereegranskat)abstract
- Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction.
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| 6. |
- Wosinski, T., et al.
(författare)
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Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures
- 2008
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Ingår i: Materials Sceince - Poland. - 0137-1339 .- 2083-134X. ; 26:4, s. 1097-1104
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Konferensbidrag (refereegranskat)abstract
- Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.
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| 7. |
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