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Träfflista för sökning "WFRF:(Xi Yuanyuan) srt2:(2020)"

Sökning: WFRF:(Xi Yuanyuan) > (2020)

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1.
  • Beal, Jacob, et al. (författare)
  • Robust estimation of bacterial cell count from optical density
  • 2020
  • Ingår i: Communications Biology. - : Springer Science and Business Media LLC. - 2399-3642. ; 3:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Optical density (OD) is widely used to estimate the density of cells in liquid culture, but cannot be compared between instruments without a standardized calibration protocol and is challenging to relate to actual cell count. We address this with an interlaboratory study comparing three simple, low-cost, and highly accessible OD calibration protocols across 244 laboratories, applied to eight strains of constitutive GFP-expressing E. coli. Based on our results, we recommend calibrating OD to estimated cell count using serial dilution of silica microspheres, which produces highly precise calibration (95.5% of residuals <1.2-fold), is easily assessed for quality control, also assesses instrument effective linear range, and can be combined with fluorescence calibration to obtain units of Molecules of Equivalent Fluorescein (MEFL) per cell, allowing direct comparison and data fusion with flow cytometry measurements: in our study, fluorescence per cell measurements showed only a 1.07-fold mean difference between plate reader and flow cytometry data.
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2.
  • Du, Wanyi, et al. (författare)
  • Photodoping of graphene/silicon van der Waals heterostructure observed by terahertz emission spectroscopy
  • 2020
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 117:8
  • Tidskriftsartikel (refereegranskat)abstract
    • Photodoping as a nonvolatile and reversible method can be used to modify the carrier distribution at the heterojunction interface. Herein, we explore the 2D/3D van der Waals (vdW) graphene/silicon (G/Si) heterostructure in real time by terahertz (THz) emission spectroscopy. Photoinduced doping is introduced by a continuous wave laser, which leads to a screening effect to the built-in electric field at the interface. The resulting decrease in transient photocurrent reduces the THz emission amplitude from the G/Si heterostructure. The photoinduced doping effect suggests a 40% THz intrinsic modulation depth at external reverse bias. This work provides an effective way to actively control the THz emission process from the G/Si interface and paves the way for analyzing the interfacial process under photoinduced doping in vdW heterostructures.
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