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- Yang, Xiaoyong, et al.
(författare)
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An emerging Janus MoSeTe material for potential applications in optoelectronic devices
- 2019
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Ingår i: Journal of Materials Chemistry C. - : ROYAL SOC CHEMISTRY. - 2050-7526 .- 2050-7534. ; 7:39, s. 12312-12320
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Tidskriftsartikel (refereegranskat)abstract
- Motivated by the extraordinary physical and chemical properties of Janus transition-metal dichalcogenides (TMDs) due to the change of the crystal field originating from their asymmetry structures, the electronic and optical properties of the MoSeTe monolayer in 2H and 1T phases are systematically studied by first-principles calculations, and a detailed comparison with the parental MoSe2 and MoTe2 monolayer is made. It is found that 2H-MoSeTe exhibits a direct bandgap of 1.859 eV and an indirect band gap of 0.391 eV in the 1T phase, resulting in a different way to interact with sunlight. Besides, the obtained results show that the SOC has little effects on the band gaps. The calculated optical properties show a significant red shift from the MoSe2 to MoSeTe to MoTe2 monolayer. However, a blue shift is observed from the in-plane to out-of-plane direction. Moreover, both electron-electron and electron-hole correlation effects are considered for obtaining the optical spectra of systems by G(0)W(0) and G(0)W(0) + BSE approaches. Besides, the absorption coefficient value reaches up to 1 x 10(6) cm(-1) in both phases, implying the high efficiency in the utilization of solar energy for the MoSeTe monolayer. Additionally, the 1T-MoSeTe monolayer is a good hot mirror material in that its maximum reflectivity could reach up to 51% in the infrared region. Additionally, the average optical absorbance of the Janus MoSeTe monolayer in the visible light region is calculated to be about 2% and the corresponding average transmittance is around 80%. More importantly, the difference in the optical response for the two side surfaces is considered in our work due to the intrinsic asymmetric structure of Janus MoSeTe. These results not only predict the great potential application of Janus MoSeTe in optoelectronics-electronic devices, but may enable the discovery of new optical science and the realization of various light emissions, detection, modulation and manipulation functions of specific frequencies.
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| 2. |
- Yang, Xiaoyong, et al.
(författare)
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Interfacial aspect of ZnTe/In2Te3 heterostructures as an efficient catalyst for the hydrogen evolution reaction
- 2019
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Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry. - 2050-7488 .- 2050-7496. ; 7:48, s. 27441-27449
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Tidskriftsartikel (refereegranskat)abstract
- In the class of two-dimensional (2D) materials, group III2-VI3 compounds have drawn intense attention due to its excellent surface properties. In this work, based on first-principles calculations, we have systematically investigated the structural, electronic, optical and photocatalytic properties of a ZnTe/In2Te3 heterostructure, along with its interfacial effects, to design an efficient photocatalyst. We have employed hydrogen adsorption free energy (Delta G(H*)) as a key parameter to demonstrate the enhancement in photocatalytic activity of ZnTe/In2Te3 compared to a pristine In2Te3 monolayer, which is further verified with the explicit water environment. The underlying mechanism is governed by the partial charge distributions of pristine In2Te3 and ZnTe/In2Te3 heterostructures. The presence of the ZnTe monolayer also altered the bandgap of the In2Te3 monolayer from an indirect gap of 1.238 eV to direct gaps of 0.298 eV and 0.181 eV in A- and B-type interfaces of the ZnTe/In2Te3 heterostructure, respectively. Calculated optical absorption spectra indicate that ZnTe/In2Te3 heterostructures possess better sunlight-harvesting capability compared to monolayer In2Te3 near the infrared and visible light regions, implying their potential as an excellent light-absorber. Our predictions provide new guidance for designing 2D III2-VI3 heterostructures and expand the applications of these materials in photovoltaics, photocatalysts, and other nanodevices in the future.
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