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| 2. |
- Grahn, J. V., et al.
(författare)
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A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
- 2000
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 44:3, s. 549-554
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Tidskriftsartikel (refereegranskat)abstract
- A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor deposition at reduced pressure was used for low-temperature SiGe epitaxy. Following SiGe epitaxy, the process temperature budget was kept very low with 900 degrees C for 10 s as the highest temperature step. A very high current gain of almost 2000 and cut off frequency of 62 GHz were achieved for a uniform 12% Ge profile. The breakdown voltage BVCEO and forward Early voltage were equal to 2.9 and 6.5 V, respectively.
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| 3. |
- Kim, Jang-Yong, et al.
(författare)
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Magnetically and electrically tunable devices using ferromagnetic/ferroelectric ceramics
- 2004
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 241:7, s. 1714-1717
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Tidskriftsartikel (refereegranskat)abstract
- There has been a growing interest in tunable devices applications such as filters, phase shifters, and resonators. Both of ferromagnetic and ferroelectric materials have strong advantages in the high tunability and stability. Therefore many reports have been published by employing ferrite or dielectric materials for high frequency devices applications. Both of controllable dielectric permittivity and magnetic permeability were considered one of the solutions for impedance matching in tunable devices. In this experiment ferromagnetic/ferroelectric composite ceramics were successfully fabricated without any cracking or shrinkage. Fabricated ferromagnetic/ferroelectric composite ceramic showed ferroelectric properties of P-E hysteresis and magnetic properties of B-H hysteresis loops.
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| 4. |
- Suvar, E., et al.
(författare)
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A base-collector architecture for SiGeHBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing
- 2002
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T101, s. 64-66
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Tidskriftsartikel (refereegranskat)abstract
- A new collector technology intended for an integrated high-speed SiGe heterojunction bipolar transistor (HBT) is reported. The collector was fabricated by selective epitaxial growth (SEG) using chemical vapor deposition at 770degreesC under reduced pressure (20 torr) using SiH2Cl2 as silicon precursor and PH3 as n-type dopant source. Chemical-mechanical polishing (CMP) was applied to the overgrown SEG collector in order to achieve a smooth surface in level with the surrounding oxide. Finally, a SiGe base doped with boron was deposited using non-selective epitaxial growth (NSEG) at 650degreesC. The topography of the collector is inspected after each process step by atomic force microscopy and the topography of the completed collector/base stack indicates that this structure is promising for fabrication of the emitter window. A further advantage with the CMP procedure is the elimination of phosphorous segregation as evidenced by secondary ion mass spectroscopy of the base-collector stack.
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