| 1. |
- Vilenskiy, Artem, 1988, et al.
(författare)
-
Wideband Reflection-Type p-i-n Diode Phase Shifters in GaAs MMIC Technology at W-Band
- 2023
-
Ingår i: 2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023. ; , s. 209-212
-
Konferensbidrag (refereegranskat)abstract
- In this paper, we report on developing W-band GaAs p-i-n diode phase shifters (PSs) with a wideband phase and amplitude response. The PSs employ the reflection-Type architecture with reflective loads providing discrete phase tunability through diode dc control. We address the design challenge of having a stable phase shift and a minimal insertion loss imbalance for the diodes with a relatively low commutation quality factor at high millimeter-wave frequencies. Two PS examples, namely 180-and 90-degree bits, are designed for the targeted (85-105) GHz operating band. The circuits were fabricated in the commercial PIN-pHEMT GaAs process with 8 × 8 μm2,p-i-n diodes. Both simulated and measured results are in good agreement demonstrating wideband frequency performance.
|
|
| 2. |
- Zhang, Yingqi, 1995, et al.
(författare)
-
Compact Wide-Scan Dual-Polarized Dielectric Resonator Antenna Array Based on LTCC Technology for Millimeter-Wave Applications
- 2023
-
Ingår i: 2023 International Conference on Electromagnetics in Advanced Applications, ICEAA 2023. ; , s. 96-99
-
Konferensbidrag (refereegranskat)abstract
- A compact dual-polarized (DP) dielectric resonator antenna (DRA) for two dimensional (2D) wide-angle scanning phased arrays operating at 28 GHz is presented. The proposed design is based on low-temperature co-fired ceramic (LTCC) technology by virtue of the benefits in terms of scalability at millimeter-wave (mmW) frequencies. The developed DRA element integrates two stacked cylindrical dielectric resonators (DRs) surrounded by a metal frame and is fed through a cross-shaped slot. An annular cavity separates the stacked DRs from the metal frame near the antenna aperture to enhance the active impedance-matching to air. The DRA element is analyzed in the infinite array environment and is characterized using an 8 × 8 array architecture consisting of 2 × 2 subarray tiles. This design is optimized for operation in the n261 band (27.5-28.35 GHz) with the active reflection coefficient ||Γ|| ≤ -10 dB across the targeted ±60° scan range. The array features a scan loss ranging from 3.2 dB to 3.9 dB in the H-, D-, and V-planes for both polarizations.
|
|
