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Search: WFRF:(Kowalik I. A.)

  • Result 1-11 of 11
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1.
  • Abe, K., et al. (author)
  • J-PARC Neutrino Beamline Upgrade Technical Design Report
  • 2019
  • Reports (peer-reviewed)abstract
    • In this document, technical details of the upgrade plan of the J-PARC neutrino beamline for the extension of the T2K experiment are described. T2K has proposed to accumulate data corresponding to 2×1022 protons-on-target in the next decade, aiming at an initial observation of CP violation with 3σ or higher significance in the case of maximal CP violation. Methods to increase the neutrino beam intensity, which are necessary to achieve the proposed data increase, are described.
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2.
  • Bruzzi, M, et al. (author)
  • Radiation-hard semiconductor detectors for SuperLHC
  • 2005
  • In: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
  • Journal article (peer-reviewed)abstract
    • An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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3.
  • Sawicki, M., et al. (author)
  • Homogeneous and heterogeneous magnetism in (Zn,Co)O : From a random antiferromagnet to a dipolar superferromagnet by changing the growth temperature
  • 2013
  • In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 88:8
  • Journal article (peer-reviewed)abstract
    • A series of (Zn,Co)O layers with Co contents x up to 40% grown by atomic layer deposition have been investigated. All structures deposited at 160 degrees C show magnetic properties specific to II-VI dilute magnetic semiconductors with localized spins S = 3/2 coupled by strong but short-range antiferromagnetic interactions resulting in low-temperature spin-glass freezing for x = 0.16 and 0.4. At higher growth temperature (200 degrees C) metallic Co nanocrystals precipitate in two locations giving rise to two different magnetic responses: (i) a superparamagnetic contribution coming from volume disperse nanocrystals; (ii) a ferromagneticlike behavior brought about by nanocrystals residing at the (Zn,Co)O/substrate interface. It is shown that the dipolar coupling within the interfacial two-dimensional dense dispersion of nanocrystals is responsible for the ferromagneticlike behavior.
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4.
  • Kowalik, I. A., et al. (author)
  • Element-specific characterization of heterogeneous magnetism in (Ga,Fe)N films
  • 2012
  • In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 85:18, s. 184411-
  • Journal article (peer-reviewed)abstract
    • We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signal at the Fe L edges in remanence and at moderate magnetic fields at 300 K links the high-temperature ferromagnetism with the Fe(3d) states. A sizable value of the orbital moment measured in remanence points to a large magnetic anisotropy and to a correspondingly high blocking temperature, which can stabilize the ferromagnetic-like response of the Fe-rich nanocrystals at 300 K. The XMCD response at the N K edge highlights that the N(2p) states, due to exchange coupling to Fe ions, carry considerable spin polarization. These results, supported by ab initio studies of XMCD spectra for various FeN delta nanocrystals, demonstrate that nanocrystals with delta > 0.25 account for the ferromagnetic behavior of (Ga,Fe)N films.
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6.
  • Kowalik, I. A., et al. (author)
  • MnAs dots grown on GaN( 000(1)over-bar)-(1x1) surface
  • 2007
  • In: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969 .- 1098-0121. ; 75:23, s. 11-
  • Journal article (peer-reviewed)abstract
    • MnAs has been grown by means of MBE on the GaN(000 (1) over bar)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1x10(11) cm(-2) and 2.5x10(11) cm(-2), respectively (as observed by atomic force microscopy), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d-related contribution to the total density of states distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both systems behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intradot Curie temperatures substantially different. The intradot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure, and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.
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9.
  • Kowalik, I. A., et al. (author)
  • Soft x-ray absorption spectroscopy on Co doped ZnO : structural distortions and electronic structure
  • 2016
  • In: 16th International Conference On X-Ray Absorption Fine Structure (XAFS16). - : IOP Publishing.
  • Conference paper (peer-reviewed)abstract
    • We present soft x-ray absorption spectra from a series of Co doped ZnO films. We discuss systematic variations of the Co L-edge white line intensity and multiplet features for this series of samples. We document sizeable differences in the electronic state of the Co ionic cores, as well as in the local environment of the host lattice atoms, characterised by means of x-ray absorption spectra at the O K-edge and Zn L-edges. Model calculations allow to correlate the observed effects to small structural distortions of the ZnO lattice.
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10.
  • Racka, K., et al. (author)
  • Growth of SiC by PVT method in the presence of cerium dopant
  • 2013
  • In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 377, s. 88-95
  • Journal article (peer-reviewed)abstract
    • The effect of the presence of CeO2 in the source material on the properties of SiC crystals grown by Physical Vapor Transport (PVT) method is investigated. The doping efficiency and, indirectly, the presence of the cerium vapour in the growth atmosphere were examined by study of structural, electrical and optical properties of the crystals. X-ray photoelectron spectroscopy shows that Ce2O3 and CeO2 coexist on the SiC post-growth surfaces. A detectable Ce incorporation is observed only in the last grown part of the crystal. 
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11.
  • Sliwa, E, et al. (author)
  • Influence of dexamethasone and alpha-ketoglutarate on growth and development of the skeletal system of pigs
  • 2005
  • In: Medycyna Weterynaryjna. - 0025-8628. ; 61:5, s. 526-531
  • Journal article (peer-reviewed)abstract
    • The aim of the study was to establish the influence of dexamethasone and/or alpha-ketoglutarate (AKG) on the growth, mineralization, geometric and mechanical properties of ribs as a methodological model. The experiment was conducted during the final 24 days of prenatal life and first 14 days of neonatal life. The volumetric bone density of the trabecular and cortical bone was determined separately using the quantitative computed tomography (QCT) method and Somatom AR. T - Siemens apparatus. The mechanical properties were determined using the three-point bending test according to the method by Ferretti et al. The obtained results indicate that maternal administration of dexamethasone increased volumetric mineral density, although the mechanical parameters had lower values. Prenatal administration of AKG decreased all the geometric and mechanical parameters of the investigated ribs. The results obtained during the administration of the compound in neonatal life were the opposite of the prenatal results. Dexamethasone and AKG given together had the same influence on mineralization and other properties AND increasing their values during prenatal and neonatal life. This model of administrating dexamethasone and AKG maternally during prenatal life with the intention of provoking structural growth of the skeleton may be useful in further elucidating some biological and pharmacological factors on bone formation in prenatal life.
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  • Result 1-11 of 11

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