| 1. |
- Boschi, Alex, et al.
(författare)
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Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis
- 2023
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Ingår i: Small. - 1613-6810 .- 1613-6829. ; 19:42
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Tidskriftsartikel (refereegranskat)abstract
- Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal-insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few-layer-thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic-field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films.
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| 2. |
- Shaali, Mehrnaz, 1981, et al.
(författare)
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Site-selective immobilization of functionalized DNA origami on nanopatterned Teflon AF
- 2017
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Ingår i: Journal of Materials Chemistry C. - : Royal Society of Chemistry (RSC). - 2050-7534 .- 2050-7526. ; 5:30, s. 7637-7643
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the use of arrays of Teflon AF nanopillars for directing the assembly of single rectangular DNA origami scaffolds, functionalized with covalently linked fluorophore molecules, in defined positions on patterned surfaces. This is achieved by introducing Teflon AF as a non-amplified negative e-beam resist, which is exposed and chemically developed to generate arrays of hydrophobic nanopillars with a minimum feature size 40 nm. Binding of the DNA origami to the pillars is facilitated by porphyrin moieties that act as hydrophobic molecular anchors, reaching 80% coverage of the available sites. This combination of top-down lithography and bottom-up self assembly is an efficient means of fabricating hierarchically structured bio-nanointerfaces in which the positioning of functional units is precisely controlled on the molecular scale inside the DNA assembly, and on the nanoscale at pre-designed locations on the substrate.
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| 3. |
- Shetty, Naveen, 1988, et al.
(författare)
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Scalable Fabrication of Edge Contacts to 2D Materials : Implications for Quantum Resistance Metrology and 2D Electronics
- 2023
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Ingår i: ACS Applied Nano Materials. - : American Chemical Society. - 2574-0970. ; 6:7, s. 6292-
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Tidskriftsartikel (refereegranskat)abstract
- We report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials based on the tri-layer resist system. We demonstrate the applicability of this method in devices fabricated on epitaxial graphene on silicon carbide (epigraphene) used as a scalable 2D material platform. For epigraphene, data on nearly 70 contacts result in median values of the one-dimensional (1D) specific contact resistances ρc ∼ 67 Ω·μm and follow the Landauer quantum limit ρc ∼ n-1/2, consistently reaching values ρc < 50 Ω·μm at high carrier densityn. As a proof of concept, we apply the same fabrication method to the transition metal dichalcogenide (TMDC) molybdenum disulfide (MoS2). Our edge contacts enable MoS2 field-effect transistor (FET) behavior with an ON/OFF ratio of >106 at room temperature (>109 at cryogenic temperatures). The fabrication route demonstrated here allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials. © 2023 The Authors.
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| 4. |
- Yager, Thomas, 1987, et al.
(författare)
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Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
- 2013
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:9, s. 4217-4223
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Tidskriftsartikel (refereegranskat)abstract
- We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.
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| 5. |
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| 6. |
- Alexander-Webber, J. A., et al.
(författare)
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Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene
- 2016
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 6
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to an almost linear increase in carrier density with magnetic field. This behaviour is strong evidence for field dependent charge transfer from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels we model the densities of donor states and predict the field dependence of charge transfer in excellent agreement with experimental results, thus providing a guide towards engineering epitaxial graphene for applications such as quantum metrology.
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| 7. |
- Alexander-Webber, J. A., et al.
(författare)
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Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
- 2013
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 111:9, s. e096601-
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Tidskriftsartikel (refereegranskat)abstract
- We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρxx=0) shows a [1-(T/Tc)2] dependence and persists up to Tc>45 K at 29 T. With magnetic field Ic was found to increase ∝B3/2 and Tc∝B2. As the Fermi energy approaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.
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| 8. |
- Andzane, J., et al.
(författare)
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Effect of graphene substrate type on formation of Bi 2 Se 3 nanoplates
- 2019
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 9:1
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Tidskriftsartikel (refereegranskat)abstract
- Knowledge of nucleation and further growth of Bi 2 Se 3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi 2 Se 3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as reference substrates. The influence of different graphene substrates on nucleation and further lateral and vertical growth of the Bi 2 Se 3 nanoplates is analysed. Possibility to obtain ultrathin Bi 2 Se 3 thin films on these substrates is evaluated. Between the substrates considered in this work, graphene grown on silicon carbide is found to be the most promising substrate for obtaining of 1–5 nm thick Bi 2 Se 3 films.
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| 9. |
- Baker, A M R, et al.
(författare)
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Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
- 2013
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 87:4, s. 045414-
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Tidskriftsartikel (refereegranskat)abstract
- Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by similar to 40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of T-e(4) at low temperatures and depend weakly on carrier density proportional to n(-1/2), evidence for enhancement of the energy loss rate due to disorder in CVD samples.
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| 10. |
- Baker, A M R, et al.
(författare)
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Weak localization scattering lengths in epitaxial, and CVD graphene
- 2012
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 86:23, s. 235441-
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Tidskriftsartikel (refereegranskat)abstract
- Weak localization in graphene is studied as a function of carrier density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2) using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L-phi, L-i, and L-* on carrier density. We find no significant carrier dependence for L-phi, a weak decrease for L-i with increasing carrier density just beyond a large standard error, and a n(-1/4) dependence for L-*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity. DOI: 10.1103/PhysRevB.86.235441
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