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Träfflista för sökning "WFRF:(Terentev Ya. V.) "

Sökning: WFRF:(Terentev Ya. V.)

  • Resultat 1-8 av 8
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1.
  • Toropov, A. A., et al. (författare)
  • InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
  • 2004
  • Ingår i: 11th International Conference on II-VI Compounds,2003. - : WileyVCH. ; , s. 704-
  • Konferensbidrag (refereegranskat)abstract
    • Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field.
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2.
  • Toropov, A. A., et al. (författare)
  • Exciton magnetic polarons in a type II ZnMnSe/ZnSSe superlattice
  • 2004
  • Ingår i: Physica status solidi (c)Special Issue: 11th International Conference on II–VI Compounds (II–VI 2003)Volume 1, Issue 4. - physica status solidi (c), Vol. 1, Issue 4 : WileyVCH. ; , s. 847-850
  • Konferensbidrag (refereegranskat)abstract
    • We present a time-resolved experimental study of excitonic magnetic polaron (EMP) dynamics in type II quantum wells ZnMnSe/ZnSSe. Two photoluminescence peaks were observed, which reflects coexistence of localized excitons and EMPs in the same sample. This was possible due to the competition of two localization mechanisms - magnetic localization of heavy holes in the ZnMnSe layers and non-magnetic localization of electrons in the ZnSSe layers.
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3.
  • Buyanova, Irina, 1960-, et al. (författare)
  • On the spin injection in ZnMnSe/ZnCdSe heterostructures
  • 2002
  • Konferensbidrag (refereegranskat)abstract
    •  We present results from a detailed study of spin injection in thin II-VI wide band gap semiconductor heterostructures by magnetooptical spectroscopy. It is shown that efficient spin alignment can be achieved in a diluted magnetic semiconductor barrier (a layer of ZnMnSe or ZnMnSe/CdSe superlattice) as thin as 10 nm. Rather efficient spin injection from such a thin spin aligner to a non-magnetic quantum well is demonstrated, even when the tunneling energy barrier is as thick as 10 nm. The effect of spin relaxation process on spin injection is also closely examined.
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4.
  • Buyanova, Irina, 1960-, et al. (författare)
  • Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
  • 2002
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:12, s. 2196-
  • Tidskriftsartikel (refereegranskat)abstract
    •  Magneto-optical spectroscopy in combination with tunable laser excitation is employed to study exciton spin alignment and injection in ZnMnSe/ZnCdSe quantum structures. This approach enables us to selectively create preferred spin orientation and to separately monitor subsequent spin injection from individual spin states, thus shedding light on a possible source of spin loss. It is shown that the limited spin polarization in a nonmagnetic quantum well due to spin injection from a ZnMnSe-based diluted magnetic semiconductor (DMS) is not caused by a limited degree of spin alignment in the DMS, which is in fact complete, but rather occurs during subsequent processes.
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5.
  • Terentev, Ya. V., et al. (författare)
  • Semimagnetic ZnMnSe/CdSe Fractional Monolayer Superlattice as an Injector of Spin-Polarized Carriers
  • 2002
  • Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 229:2, s. 765-768
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on effective injection of spin-oriented carriers from a semimagnetic semiconductor structure to a non-magnetic ZnCdSe/ZnSe quantum well (QW). A short-period ZnMnSe/CdSe fractional monolayer superlattice was used as a spin injector. The carriers are photo-generated in the semimagnetic region, spin-polarized via the effect of giant Zeeman splitting and then injected into the non-magnetic QW. The spin injection efficiency was estimated by circular polarization measurements of recombination emission from the QW. The maximal detected degree of the spin polarization is about 25%.
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6.
  • Toropov, A.A., et al. (författare)
  • III-V/II-VI heterovalent double quantum wells
  • 2006
  • Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:4, s. 819-826
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on design, fabrication by molecular beam epitaxy, and photoluminescence (PL) studies of III-V/II-VI heterovalent structures containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The studies of temperature-dependent and time-resolved PL have provided an insight into the nature of the exciton localization potential induced by the heterovalent interface. It is found that under the resonant conditions the observed emission mostly originates from the recombination of excitons confined in type II quantum-dot-like structures, where the holes are localised within the GaAs QW due to the well width fluctuations and the electrons are localized in the plane of the ZnCdMnSe QW due to the fluctuations of the conduction band offset at the heterovalent interface, induced by random variation of the interface microscopic structure. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.
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7.
  • Toropov, A.A., et al. (författare)
  • Density-dependent dynamics of exciton magnetic polarons in ZnMnSe/ZnSSe type-II quantum wells
  • 2006
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 73:24, s. 245335-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on time-resolved photoluminescence studies of exciton dynamics in a ZnMnSe/ZnSSe type-II quantum well. Strong separation of the electrons, confined to the nonmagnetic semiconductor ZnSSe, and holes, confined to the diluted magnetic semiconductor ZnMnSe, results in an exciton lifetime exceeding 3 ns. Two excitonic emission lines are observed in this structure at low temperatures. The lower-energy line was associated with the formation of an exciton magnetic polaron (EMP), whereas the higher-energy line was attributed to the emission of nonmagnetically localized excitons. The intensity of the EMP line was found to saturate at a relatively low density of photoexcited carriers well below the exciton Mott density. This behavior evidences a limited density of sites where the hole localization radius is small enough to ensure the fast formation of EMP's with a noticeable binding energy. © 2006 The American Physical Society.
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  • Resultat 1-8 av 8

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