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Sökning: L773:0040 6090 OR L773:1879 2731

  • Resultat 21-30 av 520
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21.
  • Enquist, F., et al. (författare)
  • The fabrication of amorphous SiO2 substrates suitable for transmission electron microscopy studies of ultrathin polycrystalline films
  • 1986
  • Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 145:1, s. 99-104
  • Tidskriftsartikel (refereegranskat)abstract
    • A method to produce SiO2 transmission electron microscopy substrates by means of silicon micromachining is described. The substrate consists of an SiO2 window 50–200 nm thick suspended in a silicon frame. It was developed to enable the study of ultrathin porous gate metals grown on the same substrate as in the device studied. The thin film to be studied can be vapour phase deposited directly onto the substrate and then without any further manipulations inserted into the transmission electron microscope.
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22.
  • Eriksson, Mats, 1963-, et al. (författare)
  • Morphology changes of thin Pd films grown on SiO2: influence of adsorbates and temperature
  • 1999
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 342:1-2, s. 297-306
  • Tidskriftsartikel (refereegranskat)abstract
    • Under certain conditions morphology changes occur when thin Pd films, grown on SiO2 at room temperature, are subject to elevated temperatures. First holes in the metal are observed, followed by network formation and finally isolation of metal islands. This process is known as agglomeration. The influence of gas exposures on this restructuring process has been studied by following variations in the capacitance of the structure and by atomic force microscopy, transmission electron microscopy and ultraviolet photoelectron spectroscopy. The capacitance measurements show that carbonaceous species have an impeding influence on the rate of agglomeration and may lock the film structure in a thermodynamic non-equilibrium state. By removing these species with oxygen exposure, i.e. by forming volatile CO and CO2, a clean surface is obtained and the agglomeration process can proceed. High oxygen or hydrogen coverages also lower the rate of restructuring, compared to the case of a clean surface. For the clean Pd surface, an apparent activation energy of 0.64 eV is found for the restructuring process.
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23.
  • Greczynski, G., et al. (författare)
  • Polymer interfaces studied by photoelectron spectroscopy : Li on polydioctylfluorene and Alq3
  • 2000
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 363:1, s. 322-326
  • Tidskriftsartikel (refereegranskat)abstract
    • The behavior of lithium atoms deposited on the surfaces of ultra-thin spin-coated films of poly(dioctylfluorene), and of condensed molecular solid films of tris(8-hydroxyquinoline) aluminum, have been studied through a combined experimental-theoretical approach. The Li-atoms donate charges to the organic systems, leading to doping-induced electronic states in the otherwise forbidden energy gap. The changes in the electronic structure induced by charge transfer from the Li-atoms are different in the two materials studied, and depend upon the localization of the electronic states to which the electrons are transferred. In the case of the delocalized wave functions of the p-system of poly(dioctylfluorene), at low doping levels, the added charges lead to the formation of polaron states, while at higher doping concentrations, bipolaron states are formed. In the case of the tris(8-hydroxyquinoline) aluminum, however, up to a level of three added electrons per molecule, the added electrons reside in states localized on each of the three ligands.
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24.
  • Grivickas, V., et al. (författare)
  • Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductors
  • 2000
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 364:02-jan, s. 181-185
  • Tidskriftsartikel (refereegranskat)abstract
    • The current status of the spatially and time-resolved free-carrier absorption (FCA) method is provided. The FCA technique allows monitoring carrier dynamics in a time scale from nanoseconds to miliseconds by employing either collinear or orthogonal geometry between pump and probe beams. A high spatial resolution is achieved allowing in-depth carrier profiles to be extracted. The method is particularly suited for investigation of injection-dependent optical and recombination phenomena: band gap optical absorption, Shockley-Read-Hall (SRH) lifetime, Auger recombination coefficient, and the injection-dependent surface (interface) recombination velocity. We summarize important aspects of the technique demonstrating numerous measurements that have been implemented in studies of bulk Si, epilaxial 4H-SiC and porous silicon.
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25.
  • Hammar, M., et al. (författare)
  • Investigation of chemically vapour deposited tungsten and tungsten silicide as contacts to n+ and p+ silicon areas
  • 1990
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 185:1, s. 9-19
  • Tidskriftsartikel (refereegranskat)abstract
    • Tungsten and WSi2 have been examined as contact barriers between aluminium and n+ - or p+ -Si. The specific contact resistivity and diode leakage current were evaluated after heat treatment at different temperatures. Rutherford backscattering spectrometry measurements, X-ray diffraction analysis, scanning electron microscopy and sheet resistance measurements were performed to study the thermal stabilities of the Al/W/Si and Al/WSi2/Si systems. The contact resistivities of chemically vapour deposited tungsten and WSi2 to n+ -Si with a surface concentration of 7.5 × 1019 cm-3 were 8 × 10-7 Ωcm2 and 9 × 10-7 Ωcm2 respectively. To p+ -Si with a surface concentration of 2.6 × 1019 cm-3, they were 5 × 10-6 and 1 × 10-6 Ωcm2. Diffusion of aluminium was revealed to occur above 475°C in the case of tungsten and at 475°C in the case of WSi2. The void formation in silicon substrates was observed after heat treatment at 500°C for the Al/WSi2/Si system. The increase in leakage current for the Al/W/Si and Al/WSi2/Si structures is related to the onset of Si-Al interpenetration. Alloy formation was observed at 500°C for tungsten contacts whereas W-Al or other alloys were not detected up to 600°C for the WSi2 contact.
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26.
  • Hellgren, N., et al. (författare)
  • Effect of chemical sputtering on the growth and structural evolution of magnetron sputtered CNx thin films
  • 2001
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 382:1-2, s. 146-152
  • Tidskriftsartikel (refereegranskat)abstract
    • The growth and microstructure evolution of carbon nitride CNx (0=x=0.35) films, deposited by reactive d.c. magnetron sputtering in Ar/N2 discharges has been studied. The substrate temperature TS varied between 100 and 550 °C, and the N2 fraction in the discharge gas varied from 0 to 100%. It is found that the deposition rate and film morphology show strong dependence on TS and nitrogen fraction. For growth temperature of 100 °C, the films are amorphous, and essentially unaffected by the nitrogen fraction. For TS>200 °C, however, the nitrogen fraction has more significant effect on the growth and structural evolution of the films. The pure carbon films appear porous and have a high surface roughness. For increasing nitrogen fraction the films become denser and the roughness decreases by one order of magnitude. It is suggested that a chemical sputtering process, during which desorption of volatile N2 and CN-species, predominantly C2N2, is important not only for the deposition rate and the nitrogen incorporation, but also for the resulting film structure. The chemical sputtering process becomes more pronounced at elevated temperatures with higher nitrogen fractions.
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27.
  • Hirschauer, B, et al. (författare)
  • Highly oriented alpha-alumina films grown by pulsed laser deposition
  • 1997
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 305:1-2, s. 243-247
  • Tidskriftsartikel (refereegranskat)abstract
    • Highly oriented thin films of alpha-alumina have been grown by pulsed laser deposition on Si(lll). The influence of the substrate temperature on the film growth was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (MID). Ablation at temperatures between room temperature and 850 degrees C gave rise to incorporated crystalline aluminium (Al), while the stoichiometric and highly oriented alpha-Al2O3 films were obtained only at 850 degrees C. The XRD rocking curve measurements of the ablated films showed the full-width-at-half-maximum (FWHM) Of 0.2 degrees. Further annealing at 1000 degrees C in air for 26 h slightly improved out-of-plane orientation. (C) 1997 Elsevier Science S.A.
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28.
  • Hirschauer, B, et al. (författare)
  • Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition
  • 1999
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 348:1-2, s. 3-7
  • Tidskriftsartikel (refereegranskat)abstract
    • CeO2 is an interesting buffer layer material for the growth of YBa(2)Cu(3)O(7-)delta overlayers on Si in devices, with the aim of preventing heat-diffusion due to its excellent lattice matching with Si and YBa(2)Cu(3)O(7-)delta. Epitaxial CeO2-films have been synthesised on Si(lll) by pulsed laser deposition. Stoichiometric changes of the CexOy-film depending on the ambient oxygen pressure during the deposition were studied by X-ray photoelectron spectroscopy. A method is presented for growing a sharp interface between CeO2 and Si(111). The dependence of the inplane orientation of the CeO2 film on the substrate temperature was investigated by X-ray diffraction. The best films, grown at 700 degrees C, showed full width at half maximum of the rocking curve close to 0.1 degrees, but already at room temperature very highly oriented films with less than 0.2 degrees were synthesised. (C) 1999 Elsevier Science S,A. All rights reserved.
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29.
  • Hultaker, A., et al. (författare)
  • Electrical and optical properties of sputter deposited tin doped indium oxide thin films with silver additive
  • 2001
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 392:2, s. 305-310
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Tin doped indium oxide (ITO) films with a few mol% of silver were prepared by reactive DC magnetron sputtering. The purpose of adding silver is to boost conductivity. The real part of the refractive index of ITO was determined from ellipsometry data, applying a model combining a Drude and a Lorentz term. The imaginary part was calculated from the absorptance, which was derived from transmittance and reflectance data. We found that up to 6 mol% of silver additive enhanced the conductivity by as much as a factor of two for layers post-treated at 200 and 300°C in reducing gas consisting of 93% N2 and 7% H2. For samples with 1 mol% silver, which was post-treated at 100 and 200°C, we observed an increase in the luminous transmittance. The transmittance decreased with increased silver content. © 2001 Elsevier Science B.V.
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30.
  • Jin, P., et al. (författare)
  • Epitaxial growth of W-doped VO2/V2O3 multilayer on a-Al2O3(110) by reactive magnetron sputtering
  • 2000
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 375:1-2, s. 128-131
  • Tidskriftsartikel (refereegranskat)abstract
    • Multilayer epitaxy with a W-VO2 top layer over a bottom layer of which the crystal phase depends on the starting oxygen flow, was done on a-Al2O3(110) by reactively sputtering a V-W (1.6 at.% wt.) alloy target at linearly increasing oxygen flow without interrupting film growth. For the film deposited in the oxygen flow from 10 to 26 sccm, a W-VO2/W-V2O3 multilayer was formed on a-Al2O3(110) with the epitaxial relationship being (001)f?(110)s, (110)f?(001)s for W-V2O3, and (010)f?(110)s, (100)f?(001)s for W-VO2 where f and s denote the film and substrate, respectively. The formation of a triple domain structure was confirmed in the W-VO2 top layer due to the strong influence from the symmetry of the substrate. The multilayer shows phase transition behavior differing from the single layer film, which was presumably due to the effects of W-doping, compositional gradient, and strain.
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