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Träfflista för sökning "WFRF:(Lai Zonghe 1948) "

Sökning: WFRF:(Lai Zonghe 1948)

  • Resultat 41-50 av 59
  • Föregående 1234[5]6Nästa
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41.
  • Tångring, Ivar, 1978, et al. (författare)
  • A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
  • 2009
  • Ingår i: Journal of Crystal Growth. - 0022-0248. ; 311, s. 1684-
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.
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42.
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43.
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44.
  • Tångring, Ivar, 1978, et al. (författare)
  • Manipulation of strain relaxation in metamorphic heterostructures
  • 2007
  • Ingår i: Applied Physics Letters. ; 90, s. 071904-
  • Tidskriftsartikel (refereegranskat)abstract
    • The authors have discovered that high doping densities in an alloy graded InGaAs buffer havedramatic effects on strain relaxation dynamics and consequently surface and optical qualities inmetamorphic heterostructures. Compared with undoped graded buffers, the use of Be dopingsignificantly improves structural, surface, and optical qualities while the use of Si dopingdeteriorates all these properties. This discovery is significant for the realization of metamorphicoptoelectronic devices.
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45.
  • Tångring, Ivar, 1978, et al. (författare)
  • Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy
  • 2007
  • Ingår i: Journal of Crystal Growth. - 0022-0248. ; 301:SPEC. ISS., s. 971-974
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate 1.25–1.29 μm metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1×1 μm2. Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 μm wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170–200 mA for a cavity length of 0.9–1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 °C.
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46.
  • Wang, Shu Min, 1963, et al. (författare)
  • Metamorphic InGaAs Materials and Telecom Lasers
  • 2009
  • Ingår i: International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper).
  • Konferensbidrag (refereegranskat)
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47.
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48.
  • Wang, Xitao, et al. (författare)
  • Fatigue properties of lead-free solders
  • 2000
  • Ingår i: Proceedings of the Third International Symposium on High Density Packaging and Failure Analysis. ; , s. 163-169
  • Konferensbidrag (refereegranskat)
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49.
  • Ye, Hong, 1987, et al. (författare)
  • High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
  • 2013
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - 1610-1642 .- 1862-6351. ; 10:5, s. 765-768
  • Konferensbidrag (refereegranskat)abstract
    • Intermediate band solar cells have attracted significant interest as a possible means of achieving high conversion efficiency. Under optimized growth parameters, we successfully achieve a high density of uniform InAs QDs grown on various matrixes by molecular beam epitaxy. Incorporating N atoms into GaAs and AlGaAs barriers effectively compensates the internal compressive strain and avoids formation of dislocations and defects. The 50 stacking of high density and uniform InAs QDs was demonstrated without detectable dislocations using 26 nm GaNAs as a barrier.
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50.
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Skapa referenser, mejla, bekava och länka
  • Resultat 41-50 av 59
  • Föregående 1234[5]6Nästa
Typ av publikation
konferensbidrag (31)
tidskriftsartikel (27)
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refereegranskat (56)
övrigt vetenskapligt (3)
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Lai, Zonghe, 1948 (59)
Liu, Johan, 1960 (34)
Wang, Shu Min, 1963 (16)
Sadeghi, Mahdad, 196 ... (13)
Larsson, Anders, 195 ... (9)
Cheng, Zhaonian, 194 ... (9)
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Andersson, Cristina, ... (8)
Wang, Xitao (6)
Zhao Ternehäll, Huan ... (5)
Chen, Liu, 1973 (4)
Sun, Peng, 1979 (3)
Willander, Magnus (2)
Pavolotskiy, Alexey, ... (2)
Belitsky, Victor, 19 ... (2)
Dochev, Dimitar Milk ... (2)
Wu, D. H. (2)
Li, Shiming, 1947 (2)
Shangguan, Dongkai (2)
Wei, Xicheng (2)
Li, S. (1)
Zhang, Y. (1)
Janzén, Erik (1)
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Nyborg, Lars, 1958 (1)
Meledin, Denis, 1974 (1)
Chen, J. J. (1)
Winkler, Dag, 1957 (1)
Henry, Anne (1)
Jiang, Hairong (1)
Yu, Yongning (1)
Sun, Peng (1)
Grönqvist, Hans (1)
Kalaboukhov, Alexei, ... (1)
Sun, Jie, 1977 (1)
Zou, Gang, 1970 (1)
Snis, Anders (1)
Wei, L-Y. (1)
Engström, Olof, 1943 (1)
Fu, Yifeng, 1984 (1)
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Chalmers tekniska högskola (59)
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