| 61. |
- Berg, Alexander, et al.
(författare)
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Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
- 2014
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 386, s. 47-51
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Tidskriftsartikel (refereegranskat)abstract
- We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved.
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| 62. |
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| 63. |
- Berg, Alexander, et al.
(författare)
-
Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
- 2017
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Ingår i: Nano Research. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 10:2, s. 672-682
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Tidskriftsartikel (refereegranskat)abstract
- Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]
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| 64. |
- Berg, Alexander, et al.
(författare)
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Growth parameter design for homogeneous material composition in ternary GaxIn1-xP nanowires.
- 2015
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 26:43
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Tidskriftsartikel (refereegranskat)abstract
- Ternary nanowires (NWs) often exhibit varying material composition along the NW growth axis because of different diffusion properties of the precursor molecules. This constitutes a problem for optoelectronic devices for which a homogeneous material composition is most often of importance. Especially, ternary GaInP NWs grown under a constant Ga-In precursor ratio typically show inhomogeneous material composition along the length of the NW due to the complexity of low temperature precursor pyrolysis and relative rates of growth species from gas phase diffusion and surface diffusion that contribute to synthesis of particle-assisted growth. Here, we present the results of a method to overcome this challenge by in situ tuning of the trimethylindium molar fraction during growth of ternary Zn-doped GaInP NWs. The NW material compositions were determined by use of x-ray diffraction, scanning transmission electron microscopy and energy dispersive x-ray spectroscopy and the optical properties by photoluminescence spectroscopy.
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| 65. |
- Berg, Alexander, et al.
(författare)
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In situ etching for control over axial and radial III-V nanowire growth rates using HBr.
- 2014
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:50
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Tidskriftsartikel (refereegranskat)abstract
- We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments.
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| 66. |
- Berg, Alexander, et al.
(författare)
-
Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System
- 2016
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Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 16:1, s. 656-662
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Tidskriftsartikel (refereegranskat)abstract
- Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum. © 2015 American Chemical Society.
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| 67. |
- Bergström, Lena, et al.
(författare)
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Klimatförändringar och biologisk mångfald : Slutsatser från IPCC och IPBES i ett svenskt perspektiv.
- 2020
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Rapport (övrigt vetenskapligt/konstnärligt)abstract
- De stora miljö- och samhällsproblemen kommer inte ensamma. De är sammankopplade på olika sätt. Detta innebär utmaningar men ger också möjligheter att utveckla åtgärder och lösningar. Det gäller både för klimatfrågan och frågan om att motverka förlusten av biologisk mångfald och ekosystem. Kunskapens betydelse för att hantera dessa och andra aspekter är ovärderlig, såväl kring specifika frågeställningar som kring omständigheter och förutsättningar för åtgärdsarbetet.Den här kunskapssammanställningen har gjorts av forskare från Lunds universitet och Sveriges lantbruksuniversitet på uppdrag av Naturvårdsverket och SMHI. Forskarna har tagit avstamp i de omfattande kunskapsutvärderingar som gjorts av den mellanstatliga klimatpanelen (IPCC) och den mellanstatliga plattformen för biologisk mångfald (IPBES). Slutsatserna från IPCC och IPBES sätts i ett svenskt perspektiv, bland annat genom utvalda exempel vilka fungerar som aktuella illustrationer av hur klimatförändringar påverkar biologisk mångfald och ekosystem i Sverige.
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| 68. |
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| 69. |
- Bi, Zhaoxia, et al.
(författare)
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InN quantum dots on GaN nanowires grown by MOVPE
- 2014
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Ingår i: physica status solidi (c). - : Wiley. - 1862-6351 .- 1610-1642 .- 1610-1634. ; 11, s. 421-424
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Tidskriftsartikel (refereegranskat)abstract
- In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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| 70. |
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