21. |
- Sacco, C., et al.
(författare)
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Low temperature hidden Fermi-liquid charge transport in under doped LaxSr1-xCuO2 infinite layer electron-doped thin films
- 2019
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Ingår i: Journal of Physics Condensed Matter. - 0953-8984 .- 1361-648X. ; 31:44
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Tidskriftsartikel (refereegranskat)abstract
- We have studied the low temperature electrical transport properties of La-x Sr1-xCuO2 thin films grown by oxide molecular beam epitaxy on (1 1 0) GdScO3 and TbScO3 substrates. The transmission electron microscopy measurements and the x-ray diffraction analysis confirmed the epitaxy of the obtained films and the study of their normal state transport properties, removing the ambiguity regarding the truly conducting layer, allowed to highlight the presence of a robust hidden Fermi liquid charge transport in the low temperature properties of infinite layer electron doped cuprate superconductors. These results are in agreement with recent observations performed in other p and n doped cuprate materials and point toward a general description of the superconducting and normal state properties in these compounds.
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22. |
- Song, Yuxin, 1981, et al.
(författare)
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MBE growth of Bi2Te3 for Thermoelectrics
- 2013
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Ingår i: Asia Communications and Photonics Conference, ACP. - Washington, D.C. : OSA. - 2162-108X.
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Konferensbidrag (refereegranskat)abstract
- Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated. Growth conditions were optimized based on Si(111) substrates with two different growth techniques, co-deposition followed by crystallization and direct growth. Growth of Bi 2Te3 on GaAs, GaN, et. al. substrates with different crystal directions and offcut angles were investigated. High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.
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23. |
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24. |
- Song, Y. X., et al.
(författare)
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Evolution of Bi2Te3 on GaN Grown by MBE
- 2014
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Ingår i: The 18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA, September 7-12, 2014.
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Konferensbidrag (refereegranskat)
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25. |
- Wiesner, M., et al.
(författare)
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The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
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