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31.	Song, Yuxin, 1981, et al. (author) Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers 2010 In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:9, s. 091903- Journal article (peer-reviewed)abstract Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.
32.	Song, Yuxin, 1981, et al. (author) Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE 2011 In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 323:1, s. 21-25 Journal article (peer-reviewed)abstract Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.
33.	Song, Yuxin, 1981, et al. (author) Molecular beam epitaxy growth of InSb1-xBix thin films 2013 In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 378, s. 323-328 Journal article (peer-reviewed)abstract Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
34.	Song, Yuxin, 1981, et al. (author) Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE 2010 In: 16th International Conference on Molecular Beam Epitaxy. Conference paper (peer-reviewed)abstract Threading dislocation blocking by incorporating nitrogen in metamorphic InGaAs buffers on GaAs grown by MBE is demonstrated. This results in large enhancement of photoluminescence intensity from the metamorphic quantum wells.
35.	Sun, Peng, 1979, et al. (author) Determination of Mason-Coffin equation for Sn-Zn based lead-free solder joint 2005 In: Proceedings of the 7th International IEEE CPMT Conference on High Density Microsystem Design, Packaging and Failure Analysis (HDP05). ; , s. pp342-347 Conference paper (peer-reviewed)
36.	Sun, Peng, 1979, et al. (author) High temperature aging study of intermetallic compound formation of Sn-3.5Ag and Sn-4.0Ag-0.5Cu solders on electroless Ni-P metallization 2006 In: Proceedings of the 56th IEEE CPMT International Conference on Electronic Components and Technology Conference (ECTC’06). ; , s. 1468-1475 Conference paper (peer-reviewed)
37.	Sun, Peng, 1979, et al. (author) Isothermal Low Cycle Fatigue Behavior of Single Shear Sn-9Zn and Sn-8Zn-3Bi Solder Joint 2005 In: Proceedings of the IEEE CPMT Conference on Electronics Component Technology (ECTC55). ; , s. 696-700 Conference paper (peer-reviewed)
38.	Sun, Peng, 1979, et al. (author) Microstructural evolution of Sn-Zn based lead-free solders after exposure to temperature and humidity 2005 In: Proceedings of the 7th International IEEE CPMT Conference on High Density Microsystem Design, Packaging and Failure Analysis (HDP05). ; , s. pp197-202 Conference paper (peer-reviewed)
39.	Tångring, Ivar, 1978, et al. (author) 1.58 µm InGaAs quantum well laser on GaAs 2007 In: Applied Physics Letters. ; 91, s. 221101- Journal article (peer-reviewed)abstract We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 µm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 µm GaAs-based lasers.
40.	Tångring, Ivar, 1978, et al. (author) A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy 2009 In: Journal of Crystal Growth. - 0022-0248. ; 311, s. 1684- Journal article (peer-reviewed)abstract We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.

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Result 31-40 of 59

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Type of publication: conference paper (30); journal article (28); doctoral thesis (1)

Type of content: peer-reviewed (56); other academic/artistic (3)

Author/Editor: Lai, Zonghe, 1948 (59); Liu, Johan, 1960 (34); Wang, Shu Min, 1963 (16); Sadeghi, Mahdad, 196 ... (13); Larsson, Anders, 195 ... (9); Cheng, Zhaonian, 194 ... (9); show more...; Andersson, Cristina, ... (8); Wang, Xitao (6); Zhao Ternehäll, Huan ... (5); Sun, Peng, 1979 (4); Chen, Liu, 1973 (4); Willander, Magnus (2); Pavolotskiy, Alexey, ... (2); Belitsky, Victor, 19 ... (2); Dochev, Dimitar Milk ... (2); Wu, D. H. (2); Li, Shiming, 1947 (2); Shangguan, Dongkai (2); Wei, Xicheng (2); Li, S. (1); Zhang, Y. (1); Janzén, Erik (1); Sun, Jie, 1977 (1); Liu, Yang (1); Hallén, Anders. (1); Zhang, Y. H. (1); Adnan, Safdar (1); Wei, Liu-Ying (1); Snis, A. (1); Desmaris, Vincent, 1 ... (1); Matic, Aleksandar, 1 ... (1); Lindahl, Niklas, 198 ... (1); Zheng, Lirong (1); Kalaboukhov, Alexei, ... (1); Winkler, Dag, 1957 (1); Nyborg, Lars, 1958 (1); Meledin, Denis, 1974 (1); Chen, J. J. (1); Henry, Anne (1); Jiang, Hairong (1); Yu, Yongning (1); Grönqvist, Hans (1); Zou, Gang, 1970 (1); Ye, L (1); Engström, Olof, 1943 (1); Fu, Yifeng, 1984 (1); Bielecki, Johan, 198 ... (1); Yadranjee Aghdam, Pa ... (1); Södervall, Ulf, 1954 (1); Zhao, Qing Xiang, 19 ... (1); show less...

University: Chalmers University of Technology (59); Linköping University (2); University of Gothenburg (1); Royal Institute of Technology (1); Malmö University (1); RISE (1)

Language: English (59)

Research subject (UKÄ/SCB): Engineering and Technology (50); Natural sciences (15); Medical and Health Sciences (1)

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