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Träfflista för sökning "WFRF:(Lai Zonghe 1948) srt2:(2010-2014)"

Sökning: WFRF:(Lai Zonghe 1948) > (2010-2014)

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12.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Effect of buffer design on structural and electrical properties of InAs films grown on GaAs substrates
  • 2014
  • Ingår i: the 41st international symposium on compound semiconductors, Montepillier, France.
  • Konferensbidrag (refereegranskat)abstract
    • Different buffer structures were grown by molecular beam epitaxy (MBE) to accommodate the large lattice mismatch of InAs with GaAs substrate. A novel graded digital superlattice (GDSL) buffer design was proposed and compared with the common one-step buffer and linear alloy graded (LAG) buffer designs. Effect of buffer structures on structural and electrical properties of the InAs films was investigated. High quality InAs films were obtained on GaAs substrates.
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13.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Effect of Buffer Quality on the Performance of InAs/AlSb Heterostructure Backward Tunneling Diode
  • 2014
  • Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035.
  • Konferensbidrag (refereegranskat)abstract
    • InAs/AlSb Heterostructure Backward Tunneling Diodes (HBTDs) were grown on semi-insulating GaAs (100) substrate using molecular beam epitaxy (MBE). The current-voltage characteristics of the InAs/AlSb HBTDs, both at room temperatures (RT) and cryogenic temperatures, have been studied as a function of the InAs buffer thickness. It has been found that a thicker InAs buffer doesn’t improve the surface roughness but decreases the threading dislocation (TD) density, thus a higher curvature coefficient in the current-voltage characteristics near zero-bias is obtained.
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  • Resultat 11-13 av 13

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