2931. |
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2932. |
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2933. |
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2934. |
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2935. |
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2936. |
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2937. |
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2938. |
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2939. |
- Wang, Shu Min, 1963, et al.
(author)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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In: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Journal article (peer-reviewed)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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2940. |
- Wang, Shu Min, 1963, et al.
(author)
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High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs
- 2008
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In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819470843 ; 6909, s. 690905-
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Conference paper (peer-reviewed)abstract
- We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm 2 per quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1 mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C has been demonstrated.
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